NTD4905N-35G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTD4905N-35G is a very popular single n-channel logic-level enhancement-mode field-effect transistor, also referred to as MOSFET. It is designed to deliver maximum power and exceptional performance in a wide range of applications. This article will discuss the application field and working principle of the NTD4905N-35G.

The NTD4905N-35G is a versatile, easily integrable and cost-effective switching device for any application. It is suitable for applications such as in low-cost, highly efficient switched-mode power supplies, DC-DC converters, pulse transformer and motor drives, battery management, and lighting control. It can also be used as a load switch to handle either high-current or peak loads.

The NTD4905N-35G features a high-speed switching capability, an extremely low on-state resistance (RDS(on)), and an extremely low threshold voltage. Furthermore, it is able to withstand temperatures up to +125°C, making it an ideal choice for applications that require superior thermal handling.

The NTD4905N-35G is designed to be used as a logic-level enhancement-mode (e-mode) device. This means that it operates in a saturated state when the gate voltage is above a set threshold voltage. When the voltage is above this threshold voltage, a decreasing gate voltage will cause the current to remain constant. The device can then be turned off by increasing the gate voltage beyond the threshold voltage.

When the device is in the saturation region, it acts more like a resistor than a transistor since it has a low resistance (RDS(on)) compared to the load impedance. In other words, when the gate voltage is above the threshold voltage, the device acts like a resistor which provides current through the load.

The NTD4905N-35G also has a very low thermal power consumption. It requires only a small amount of thermal power to keep the device operating as it does not require heat dissipation. This device also has excellent power handling capabilities and is able to handle a large amount of current without overheating.

When the device is operating in the e-mode, its gate-source voltage should not exceed the specified maximum voltage. Exceeding the maximum voltage will cause the device to enter the avalanche region. In this region, the device will be operating in its linear region where the applied gate voltage will directly control the current through the device.

In conclusion, the NTD4905N-35G is a single n-channel logic-level enhancement-mode field-effect transistor that is perfect for applications that require a load switch to handle either high current or peak loads. With its low on-state resistance, high-speed switching capability and excellent thermal performance, it is the ideal device for any application.

The specific data is subject to PDF, and the above content is for reference