NTD4959N-1G

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The NTD4959N-1G is an enhancement-mode N-channel MOSFET. It is normally used for a range of applications, including low-start-up and running low-current, low-voltage applications. It is commonly used in circuit designs such as amplifiers, motor drives and power supplies.

The NTD4959N-1G is a junction field-effect transistor that operates using the principle of surface conduction. When the gate voltage applied is higher than the threshold voltage, the channel turns on and a current can be conducted between the drain and source terminals. When the gate voltage is sufficiently larger than the threshold voltage, the channel is strongly saturated, and the drain current becomes independent of the gate voltage. This saturation mode operation makes FETs an excellent choice for wideband amplifiers and switched applications.

The NTD4959N-1G comes with a 50V maximum drain-source voltage and 30V maximum gate-source voltage. It also has a 5A maximum drain current and a 0.2 ohm drain-source on resistance. It is rated at 1.CE thermal resistance from the case to the ambient, making it suitable for high-frequency switching applications. Its performance is further optimized by its close-to-zero threshold voltage and easy to control low input capacitance.

The NTD4959N-1G is a fast, reliable, and low-cost enhancement-mode device and is suitable for a wide range of applications. It has been successfully integrated into various circuits such as switching DC-DC converters, low-voltage power supplies and motor drives, industrial lighting applications, and signal amplification. With its superior performance, longer service life and lower power consumption, it has provided an excellent solution for many projects.

In industrial applications, the NTD4959N-1G has been used in robotics and materials handling processes. It can also be found in lights and sensors controlling the environment in warehouses. In consumer applications, it can be used in TV sets, audio amplifiers, radios, and a myriad of other consumer electronics products.

The salient features of the NTD4959N-1G, such as high-switching speed, fast recovery time and excellent temperature stability, make it the ideal choice for many system designs. Its highly efficient design also offers a high surge rating that allows it to withstand transients typically found in these circuits.

Overall, the NTD4959N-1G is an excellent choice for power management applications and is highly valued for its superior performance, excellent reliability, and superior cost and energy efficiency. Its relatively low cost and ease of use also make it an attractive option for a wide range of applications.

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