NTD4913N-35G

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.36W (Ta), 24W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1013pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	10.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.7A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

NTD4913N-35G is a type of transistor known as a field effect transistor (FET). It is a single, unipolar transistor that consists of three layers of doped semiconductor material known as a channel. FETs are used in a variety of digital applications, such as in power amplifiers and powerline dimmers, as well as in data transmission and signal processing.

Applications

The NTD4913N-35G is commonly used in data transmission applications, such as digital workstations and cellular phones, where its low on-resistance and low gate-source capacitance provide greater signal speed and clarity. It is also used in power amplifier circuits for audio and other signal processing applications, as its low on-resistance and high current capacity make it well-suited for handling large currents. Additionally, it is well-suited for powerline dimmer applications, as its low gate drain capacitance prevents the generation of high electric fields during operation.

System Configurations

The NTD4913N-35G is typically configured in either common source, common drain, or common gate configurations. In a common source configuration, the gate-source voltage causes the channel’s conductivity to vary, allowing it to act as a digital switch. In common drain configurations, the drain-source voltage is varied to control the channel’s conductivity, while in common gate configurations, the gate-drain voltage is used to control the channel’s conductivity.

Benefits

The NTD4913N-35G offers several advantages over traditional bipolar transistors. These include higher speed, higher power efficiency, and lower power dissipation. In addition, FETs are immune to thermal runaway, meaning they can operate at higher temperatures than bipolar transistors without experiencing a power surge or catastrophic failure.

Conclusion

In conclusion, the NTD4913N-35G is a versatile field effect transistor that is commonly used in data transmission, signal processing, and power circuit applications. It offers a number of benefits over bipolar transistors, including higher speed, higher efficiency, and lower power dissipation. With its low on-resistance and capacitance, and its immunity to thermal runaway, the NTD4913N-35G is well-suited for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description