NTD4804NA-1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTD4804NA-1G is a single high-power N-channel MOSFET (metal-oxide-semiconductor field effect transistor) designed for low power to medium-power applications. It is designed for use in low-noise inverter and switching circuits where optimal performance and reliability are required. The design of the NTD4804NA-1G provides excellent switching characteristics with low ON-resistance and fast switching speed. It also has an integrated temperature compensation so that temperature variations do not significantly affect its performance.

The basic structure of an N-channel MOSFET includes two terminals, a source (S) and a drain (D). A third terminal, the Gate (G), is an insulated gate and is used to control the amount of current flowing between the source and drain. The Gate is typically connected to a voltage source or voltage-controlled current source in order to turn on and off the current flow between the source and the drain.

The working principle of the NTD4804NA-1G is that when the voltage from the gate to the source exceeds the threshold voltage Vth, the channel between the source and the drain forms and current flows from the source to the drain. The flow of current is proportional to the voltage applied to the gate. Conversely, when the voltage from the gate to the source drops below Vth, the channel between the source and the drain collapses and current no longer flows.

The NTD4804NA-1G is highly suitable for motor control, DC/DC converters, power supply control, inverter applications, and high-frequency switching applications. Due to its low ON-resistance and fast switching times, it ideal for applications requiring fast switching and high efficiency, such as laptop and mobile device chargers, LED lighting, and automotive applications. The low RDS(ON) and fast switching times of the NTD4804NA-1G reduce power losses, increase efficiency, and improve the operation of motor control, DC/DC converters, and power supply converters.

The NTD4804NA-1G is also suitable for audio applications, such as Class D audio amplifiers. It is optimized for low distortion and low noise operation, making it an excellent choice for audio applications that require low noise and high fidelity. The power handling capabilities of the NTD4804NA-1G also make it ideal for high-end consumer audio amplifiers, automotive audio systems, and professional audio systems.

The NTD4804NA-1G is also suitable for smart grid applications. Its low RDS(ON) and fast switching times make it an excellent choice for power supply control, smart meters, and distributed energy resources applications. It is also suitable for solar and wind energy applications due to its low power consumption and wide operating temperature range.

The NTD4804NA-1G is highly reliable and durable due to its integrated temperature compensation and advanced packaging technologies. Its small size and high power dissipation make it an ideal solution for space-constrained applications. In addition, it is cost-effective and easy to incorporate into existing designs.

In summary, the NTD4804NA-1G is a single-channel, high-power N-channel MOSFET designed for low power to medium-power applications. It is ideal for motor control, DC/DC converters, power supply control, inverter applications, and high-frequency switching applications. Additionally, it is suitable for audio applications due to its low noise and low distortion. Finally, it is suitable for high-end consumer audio amplifiers, automotive audio systems, and professional audio systems. Its low RDS(ON) and fast switching times make it an excellent choice for smart grid applications and energy harvesting applications.

The specific data is subject to PDF, and the above content is for reference