Allicdata Part #: | NTD4963N-35GOS-ND |
Manufacturer Part#: |
NTD4963N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 8.1A IPAK |
More Detail: | N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W... |
DataSheet: | NTD4963N-35G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta), 35.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1035pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.1A (Ta), 44A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4963N-35G Application Field and Working Principle
NTD4963N-35G belongs belongs to a type of transistor and is categorized under Transistors - FETs, MOSFETs - Single. The basic purpose of a transistor is to regulate and control the voltage or current in a specific circuit. Typically, transistors are found in virtually all electronic circuits, since they can act as amplifiers, switches,and voltage regulators, as well as a variety of other useful applications. The NTD4963N-35G is a high-performance Power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is an N-Channel MOSFET, which means that the gate voltage is applied to the semiconductor material between the source and drain, controlling the current flow between the drain and source.
The NTD4963N-35G has a drain-source voltage rating of 35V, which implies that it is designed to operate within a wide range of voltage levels. It also has an improved Gate Threshold Voltage and a low On-Resistance, which allow it to have superior static performance. Moreover, the NTD4963N-35G boasts a reduced driving current, making it ideal for applications where low power consumption is important. Additionally, the NTD4963N-35G is equipped with an insulated Gate, which helps to reduce the noise between the gate and the source, thus improving its EMI immunity.
The working principle of the NTD4963N-35G is based on the ability of the MOSFET to regulate and control the current flow in a circuit. When the gate of the transistor is left floating, no current can flow through the device. However, when a voltage is applied to the gate, the resistance between the source and the drain decreases, allowing current to flow from the source to the drain. The amount of current that is allowed to flow is largely determined by the voltage applied to the gate, and can be adjusted according to the desired application.
The NTD4963N-35G is primarily used to provide power amplification and can be found in a wide range of electrical and electronic devices, such as televisions, audio amplifiers, computers, and more. It is also well-suited for applications in motor control and power switching, due to its ability to control large amounts of current with ease. Additionally, the NTD4963N-35G can be used as a rectangular waveform generator, as its ability to quickly switch between an on and off state makes it ideal for this type of application.
Overall, the NTD4963N-35G is a highly versatile transistor that can be used in a variety of applications. Its high-performance specifications, coupled with its low power consumption, make it an excellent choice for many electrical and electronic applications. Additionally, its insulated Gate helps to reduce EMI noise and interference, giving it added performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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