NTD4906NT4G Discrete Semiconductor Products

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The NTD4906NT4G is a high-power, surface-mounted N-Channel Trench MOSFET designed to be used in wide range of applications in both consumer and industrial fields. The device is specifically designed to provide low on-resistance, high voltage withstanding capability, and low gate charge – all of which combine to create a compact and highly efficient device for a wide range of applications. This article will provide an overview of the application fields and working principles of the NTD4906NT4G.

Detail of NTD4906NT4G

The NTD4906NT4G is a Vertical N-Channel Power MOSFET available in a TO-220AB package. The device features high voltage and low on-resistance in order to optimise efficiency and size of switching systems. The device has a breakdown voltage of 500 V and a drain source voltage of 350 V with a continuous drain current of 29 A.

NTD4906NT4G Application Fields

The NTD4906NT4G has multiple uses in consumer and industrial applications. The device is capable of providing efficient power transmission, making it ideal for use in DC-DC converters, including buck and boost converters. The device can also be used with any type of motor, including BLDC motors and can also be used in automotive ignition systems. The device is able to provide excellent switching performance and can be used in power equipment, including power audio amplifiers, digital signage displays, and LED drivers.

NTD4906NT4G Working Principles

The NTD4906NT4G is a vertical N-Channel MOSFET which uses a combination of a metal oxide and an electric field to switch electrons. The electric field is created by a voltage applied to the gate electrode, turning the device on or off. When the voltage applied to the gate electrode is greater than the drain-source voltage, the electric field will be stronger and cause the device to turn on. This will allow current to flow between the drain and source terminals and complete the circuit. Conversely, when the gate voltage is too low, the electric field will be too weak, causing the device to remain off.

The NTD4906NT4G also uses a trench-gate design to improve its switching performance. This design allows electrons to move more freely and quickly, resulting in a higher switching frequency and lower power loss. The device is also built using a vertical structure which helps to reduce on-resistance. This helps to reduce power losses, minimising the amount of heat generated by the device and improving overall efficiency.

Conclusion

The NTD4906NT4G is a high-power, surface-mounted N-Channel Trench MOSFET optimised for a wide range of consumer and industrial applications. The device features excellent voltage and on-resistance and is capable of providing efficient power transmission for DC-DC converters, BLDC motors, automotive ignition systems, power equipment such as audio amplifiers, digital signage displays, and LED drivers. The device uses a combination of a metal oxide and an electric field to switch electrons and has a trench-gate design to improve its switching performance and reduce power losses.

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