Allicdata Part #: | NTD4858NA-35G-ND |
Manufacturer Part#: |
NTD4858NA-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 11.2A IPAK |
More Detail: | N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5... |
DataSheet: | NTD4858NA-35G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta), 54.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1563pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 19.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 30A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta), 73A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4858NA-35G is an N-channel MOSFET with a drain-source voltage rating of 30V. With a continuous drain current of 35A and a continuous drain source voltage of 30V, the NTD4858NA-35G provides excellent performance and reliability. The NTD4858NA-35G can be used for a variety of applications such as motor control, DC-DC converters, and power supplies.
The NTD4858NA-35G is an ideal MOSFET for switching high power loads. Because of its low on-state resistance and low gate charge, the NTD4858NA-35G can switch large currents without generating large amounts of heat. The device also has a high current carrying capacity, which makes it suitable for use in power supplies and motor control applications.
The NTD4858NA-35G works by manipulating the electric field between its source and drain terminals. When biased properly, the electric field is distributed throughout the source-drain junction and enables carriers to flow. When a voltage is applied to the gate of the MOSFET, it produces a channel of negative electrons that depletes the electric field between the source and drain terminals. This channel of negative electrons turns the MOSFET on, allowing current to flow while blocking voltage. Conversely, when a voltage is removed from the gate terminal, the channel of negative electrons disappears, which turns off the MOSFET.
The NTD4858NA-35G is a versatile device that is suitable for many applications. Its high current carrying capacity, low on-state resistance, and low gate charge make it an ideal choice for motor control, DC-DC converters, and power supplies.
In summary, the NTD4858NA-35G is an N-channel MOSFET with a drain-source voltage rating of 30V and a continuous drain current of 35A. With its low on-state resistance, low gate charge, and high current carrying capacity, the NTD4858NA-35G is an ideal choice for applications such as motor control, DC-DC converters, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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