Allicdata Part #: | NTD4858N-35GOS-ND |
Manufacturer Part#: |
NTD4858N-35G |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 11.2A IPAK |
More Detail: | N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5... |
DataSheet: | NTD4858N-35G Datasheet/PDF |
Quantity: | 2015 |
1 +: | $ 0.58590 |
10 +: | $ 0.51219 |
100 +: | $ 0.39533 |
500 +: | $ 0.29285 |
1000 +: | $ 0.23427 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta), 54.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1563pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.2A (Ta), 73A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTD4858N-35G is an advanced field effect transistors (FETs) device that acts as single MOSFETs. Available in an easy-to-use SOT89 package, this device offers high-efficiency and low-power consumption with a low maximum on-state drain current of 48A.
This MOSFET is especially useful for applications that need a device that can effectively control the voltage and current of a circuit. The device’s low on-state resistance provides an excellent maximum on-state drain current while the high-speed switching capability ensures applications will have efficient power delivery. Additionally, the NTD4858N-35G is designed with an optimized gate charge to reduce gate delays for improved performance.
Application Field
The NTD4858N-35G is an extremely versatile transistor, making it ideal for a variety of applications. It is commonly used in the automotive, medical, military and aerospace markets. The device can be used for switching, voltage level shifting, DC-DC conversional and power amplifying. It is also used in motor controls, pulse generation, motor controllers, switching power supplies and other power management applications. The NTD4858N-35G is also suitable for a wide range of analog and digital circuits due to its low on-state resistance.
Working Principle
The NTD4858N-35G is a MOSFET and the main elements of the device are the source, gate and drain. The source is where the electrical current enters into the device. When a positive charge is applied to the gate, it polarizes the channel of the device allowing conduction to occur between source and drain. Therefore, the MOSFET acts as a switch where conduction between the source and drain can be controlled with the application of a voltage to the gate and by controlling the drain current. The turn on and turn off of the MOSFET is also made easier due to its optimized gate charge, providing fast and efficient performance.
The NTD4858N-35G is an advanced type of field effect transistor that is one of the most useful devices in the market. It offers superior performance, low power consumption, and efficient power delivery, making it ideal for a myriad of applications in the automotive, medical and aerospace industries. Additionally, the low on-state resistance and optimized gate charge makes it easy to control the voltage and current of a circuit, making it an invaluable asset for many digital and analog circuit applications.
The specific data is subject to PDF, and the above content is for reference
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