NTD4302

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.04W (Ta), 75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 24V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	10 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.4A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The NTD4302 is a surface-mount, single-gate, N-channel Field Effect Transistor (FET) typically employed as a load switch in computing applications. It is best suited for loads of up to 19V and 330mA that are driven by a voltage or current source of 0V to 5V.The NTD4302 is mainly employed to switch off power to the load, thereby offering an electronic ‘off’ switch. It features an integrated voltage clamp (diode-connected) to protect against voltages exceeding the maximum voltage the transistor can handle. The integrated ESD (electrostatic discharge) protection makes the device suitable for extreme conditions.This device is commonly used in applications involving the protection of a system from over-voltage, over-current, and short-circuiting. For example, it is often used as a load switch in switching and linear power supplies, cellphone applications, and in industrial motor control systems.The symbol of the NTD4302 device is as shown in Figure 1 below.

Figure 1: Symbol of the NTD4302

The structure of the NTD4302 is of the Butterfly+® cylinder cell which consists of a two-gate, one-channel FET with a single source, source-gate, and drain connection. The device is an enhancement mode FET and thus, when the gate voltage is at 0V, the source-drain path is in an ‘off’ condition.The gate of an NTD4302 can be controlled with a voltage that ranges from 0V to 5V and the device can be used to switch supply currents between 0mA and 330mA (depending on the maximum voltage rating). The on-state resistance of the device is typically 5Ω at 1V and 10mA. The device operates best at the rated current, but the on-state resistance increases significantly if the current is higher than the rated current.The maximum drain-source voltage can range between -3V to 11V and the maximum gate-source voltage can range between -3V to +5V. The maximum continuous drain current that can be handled by the device is 330mA and the power dissipation is typically 300mW when operating in an ambient temperature of 100°C.The turn-on delay time for the NTD4302 is 10ns, while the turn-off delay time is 20ns. This device is designed for operation in the temperature range of – 4℃ to +85℃.The NTD4302 is designed as a semiconductor switch and it works by supplying a controlled electric current to the device through the gate pin. When power is applied to the gate of the FET, the device will start conducting electric current from the source to the drain. The current gain achieved due to the open drain-source channel is termed as the ‘drain-source resistance’. The NTD4302 has an on-state drain-source resistance of 5Ω at 1V and 10mA.When the device is turned off, the channel of the NTD4302 is completely closed, which results in a high OFF state resistance. This resistance is typically in the order of higher than 10MΩ.In summary, the NTD4302 is a surface-mount, single-gate, N-channel FET that is typically used as a load switch in computing applications. It is suitable for load currents up to 330mA and is suitable for operating in an ambient temperature of – 4℃ to +85℃. The device offers an integrated voltage clamp, ESD protection, and a high OFF-state resistance making it suitable for protection against over-voltage and over-current. It features a drain-source resistance of 5Ω at 1V and 10mA, a maximum drain-source voltage of 11V, and a maximum gate-source voltage of 5V. The turn-on and turn-off delay time of the NTD4302 is 10ns and 20ns, respectively.

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