NTD4302G Allicdata Electronics
Allicdata Part #:

NTD4302GOS-ND

Manufacturer Part#:

NTD4302G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 8.4A DPAK
More Detail: N-Channel 30V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W ...
DataSheet: NTD4302G datasheetNTD4302G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD4302G is a single transistor which belongs to field effect transistors and MOSFETs. This type of transistor has the advantage of low power consumption, high current carrying capacity and high dielectric strength when compared to other types of transistor.

The NTD4302G is typically used in applications such as amplifier circuits, power control, and pulse circuits. Different types of circuits are used depending on the specific application and requirements. This particular type of transistor is also suitable for use in electronic sensors, power switches and signal conditioning.

The NTD4302G is capable of supplying currents of up to 100V and can handle junction temperatures of up to 250°C. It has a low output capacitance which helps reduce signal distortion at high frequencies. This feature makes it ideal for use in signal amplifiers and signal conditioning circuits.

The working principle of the NTD4302G relies on the action of both electrons and holes. Electrons are negatively charged particles that move from the source to the drain. Holes are positively charged particles that move from the drain to the source. When a voltage is applied to the gate of the NTD4302G, electrons and holes are attracted towards the gate and this creates a channel in the semiconductor material.

The current then flows through this channel when a voltage is applied to the source and drain, while the current flow can be modulated by controlling the gate voltage. This is why the NTD4302G is found to be extremely useful in voltage controlled devices such as power switches, electronic controls, and other high frequency amplifier components. This type of transistor has the advantage of high transconductance as compared to other types of power transistor.

The NTD4302G can also be used in low-noise and precision amplifier applications. Its low noise performance is due to the low output capacitance which reduces high frequency signal distortion. This transistor is also known for its high input impedance and fast switching times, which make it suitable for designing high speed switching applications.

The NTD4302G is also capable of being used in high power applications due to its high current carrying capability. This type of transistor is particularly suitable for use in various audio, radio and television applications. The low dissipation power makes this type of transistor ideal for use in a variety of situations.

In conclusion, the NTD4302G is a single field effect transistor and belongs to the MOSFETs family. It has many advantages such as low power consumption, high current carrying capacity, and high dielectric strength when compared to other types of transistor. The working principle of the NTD4302G relies on the action of both electrons and holes, and it can be used for applications such as amplifier circuits, power control, and pulse circuits. The wide range of features makes this type of transistor ideal for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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