Allicdata Part #: | NTD4804NA-35G-ND |
Manufacturer Part#: |
NTD4804NA-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 14.5A IPAK |
More Detail: | N-Channel 30V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 93... |
DataSheet: | NTD4804NA-35G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.43W (Ta), 93.75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4490pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Ta), 124A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4804NA-35G is a single N-channel MOSFET from ON Semiconductor\'s NTD48xxNA-35G series. It is commonly used as a power switch or to regulate the flow of electrons from the source to the drain. This device is a product of advanced process technology, designed for low-voltage, high-current applications such as power supply systems and digital circuits.
The NTD4804NA-35G is a MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, meaning it is a type of semiconductor device that uses a MOS (metal oxide) gate to control electric current flow between a source and drain. It is a voltage-controlled switch, meaning that it can be used to turn on and off by applying a voltage to the gate terminal. When a drain-source voltage is applied, electrons from the source flow to the drain through the channel, and the NTD4804NA-35G is turned “on.”.
The NTD4804NA-35G is a single N-channel, meaning that it consists of a single channel between the drain and source, with a potential difference applied across them required to switch the device “on.” It is also a depletion-mode device, meaning it is in the "on" state when no voltage is applied to the gate. This allows current to freely flow from source to drain, until a voltage is applied, causing the device to switch “off.”
The NTD4804NA-35G is robust and can operate directly from a battery supply up to 9V, making it highly suitable for portable application. The gate capacitance is less than 45pF, making it suitable for multiplexer applications and high-speed response times. It is also capable of providing up to a 60V drain-source breakdown voltage, making it ideal for automotive and other harsh-environment applications.
The NTD4804NA-35G is designed for single low-voltage, high-current applications as it has a low RDS(on) of 10Ω. This makes it suitable for controlling high-current drain applications such as power supply systems, digital circuits and automotive applications. It also provides low on-state resistance and fast switching times, making it an ideal choice for a wide range of high-current applications.
In conclusion, the NTD4804NA-35G is a robust single N-channel MOSFET with a low RDS(on) that makes it suitable for a wide range of high-current applications. Its ability to operate directly from a battery supply makes it ideal for portable applications, while its gate capacitance and breakdown voltage make it suitable for multiplexer applications and automotive applications in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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