NTD4806N-35G Allicdata Electronics
Allicdata Part #:

NTD4806N-35G-ND

Manufacturer Part#:

NTD4806N-35G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 11A IPAK
More Detail: N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W ...
DataSheet: NTD4806N-35G datasheetNTD4806N-35G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD4806N-35G is a single positive channel metal-oxide semiconductor field-effect transistor (MOSFET) designed using advanced PowerMESH technology. It suits a wide variety of applications that require high voltage switching, such as motor drives, lighting, heating and motion control. This high-performance device has low on-state resistance and relatively low gate threshold voltage. In addition to its power and speed benefits, the NTD4806N-35G is also highly efficient and has high temperature, current and voltage capability.

The working principle of the NTD4806N-35G is essentially the same as that of other MOSFETs. In a MOSFET, the source, gate and drain terminals are used to turn the device on or off. To turn the device on, a positive voltage is applied to the gate and source terminals, while a negative voltage is applied to the drain. This causes a channel of electrons to form between the gate and the drain, allowing some current to pass through the channel. To turn the device off, the positive voltage is removed from the gate terminal and the channel of electrons no longer forms. The resistance of the drain to source directly correspond to the magnitude of the gate voltage.

The NTD4806N-35G is specifically used for applications that require high switching speed and voltage. It has a high current capability, a low on-state resistance and a gate threshold voltage of 0.8 V. Its high temperature capability is also an advantage, especially for applications that require operating temperatures greater than 150 °C. The NTD4806N-35G is capable of withstanding temperatures up to 175 °C.

The applications of the NTD4806N-35G can be found in many different industries. It is commonly used in motor drives and lighting, where it can provide fast switching and precise control. Other applications include audio power amplifiers, power supplies, automotive lighting, industrial automation and robotics. It is also used in solar and wind energy systems to provide precise switching and high efficiency.

In conclusion, the NTD4806N-35G is a single positive channel MOSFET designed using advanced PowerMESH technology. It offers low on-state resistance and a relatively low gate threshold voltage, making it suitable for applications requiring high switching speed and voltage. It is highly suitable for motor drives, lighting, heating and motion control, as well as audio power amplifiers, power supplies, solar and wind energy systems and other automated industrial processes. The NTD4806N-35G is an efficient and reliable device for many demanding applications.

The specific data is subject to PDF, and the above content is for reference

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