NTD40N03R-001

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.5W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	584pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.78nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	16.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.8A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD40N03R-001 is a N-Channel MOSFET from NXP. It is a 40V 3Ω N-Channel Power MOSFET with a logic-level logic threshold voltage for minimal power dissipation in low-power applications. The device is available with either a standard lead-free package or an optional lead-free SOT-223 package so that it can be used in both standard and low-profile applications. The NTD40N03R-001 is a MOSFET consisting of four regions of operation. The first region is the Gate. The Gate is the control element of the device, and is where the power to control the on and off states of the MOSFET is applied. The Gate capacitance of the NTD40N03R-001 is very low, enabling the device to operate quickly. The second region is the Source. The Source is the ground connection for the MOSFET. The low impedance Source of the NTD40N03R-001 is capable of providing various voltage and current levels. The Source is connected to the circuit ground to provide a return path for current from the Drain. The third region is the Drain. The Drain provides the current flow for the MOSFET which is determined by the Gate voltage applied. The Drain capacitance of the NTD40N03R-001 is low, ensuring fast switching speeds. The fourth region is the Body region. The Body connection is connected to the substrate and is used to complete the circuit when the MOSFET is active. The Body region has been designed to provide improved latch-up immunity, enabling better circuit reliability in high-temperature operating environments. The device is a surface-mount MOSFET, and is ideal for many switching applications such as DC-DC converters, relay drivers, AC power control circuits, power MOSFET drivers and many other applications. The device features an internal ESD protection, providing extra protection against transient voltages and surges. The device has been designed to provide fast switching with low on-resistance and low gate charge, enabling simple and efficient circuit design. The typical application field of the NTD40N03R-001 is low-power switching applications. This device is an ideal choice for a wide range of load switch, automotive load switch and H-bridge switch applications. The device has been designed to provide high reliability and efficiency in high-current, low-voltage switch applications. The typical working principle of the NTD40N03R-001 is to control the current flow through the device in response to the Gate voltage. When the Gate voltage is below the threshold voltage, the MOSFET is in the off-state, and no current flows from the Source to the Drain. When the Gate voltage is above the threshold voltage, the MOSFET is in the on-state and current will flow from the Source to the Drain. The on-state resistance of the device is very low, enabling high current switching capabilities. In summary, the NTD40N03R-001 is an ideal N-Channel MOSFET for use in low-power switching applications. The device features low Gate and body capacitances, low on-state resistance and an internal ESD protection. The device can provide fast switching operations with high efficiency and reliability. It is available in both a standard lead-free package and an optional lead-free SOT-223 package, making it suitable for both standard and low-profile applications.

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