Allicdata Part #: | NTD4965N-35G-ND |
Manufacturer Part#: |
NTD4965N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 68A IPAK-3 |
More Detail: | N-Channel 30V 13A (Ta), 68A (Tc) 1.39W (Ta), 38.5W... |
DataSheet: | NTD4965N-35G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.39W (Ta), 38.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 68A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4965N-35G is a type of transistor commonly referred to as a field-effect transistor (FET). FETs are also known as unipolar transistors, as opposed to bipolar transistors, and is a basic building block in digital circuits and control systems. FETs work by regulating electric current and voltage from one part of the circuit to another, which enables better control of electrical properties. NTD4965N-35G devices work in a slightly different way from ordinary transistors, making them popular for specific applications.
NTD4965N-35G devices are a type of MOSFET, or Metal-Oxide Semiconductor Field-Effect Transistor. MOSFETs, like all FETs, rely on an electric field to control the width of a channel of conducting material. The gate electrode is used to control the current flow between the source and drain, and can be turned on or off. The holding voltage of NTD4965N-35G devices is typically 35 volts, making them a good choice for many applications requiring higher voltages.
The main difference between NTD4965N-35G devices and ordinary transistors is that the gate voltage controls the current flow through the device rather than the current itself. This means the current is slower to react to input signals and can be used to amplify weak signals. This makes them ideal for many applications, including switching power supplies, signal amplifiers, and motor controls.
In addition to their practical applications, NTD4965N-35G devices can also be used as part of an educational circuit to demonstrate FETs. This can be done by simply connecting the four pins of the transistor (three source, gate, and drain) to a power source and a resistor. When the gate voltage is changed, the current through the device will change accordingly, demonstrating the transistor switching properties.
In summary, NTD4965N-35G devices are a type of transistor commonly referred to as a field-effect transistor (FET). They are a type of MOSFET, meaning that they rely on an electric field to control the width of a channel of conducting material. The NTD4965N-35G device has a holding voltage of 35 volts, making them a good choice for applications requiring higher voltages. They are commonly used in switching circuits, signal amplifiers, and motor control applications, as well as being an excellent choice for educational demonstration circuits.
The specific data is subject to PDF, and the above content is for reference
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