Allicdata Part #: | NTD4913N-1G-ND |
Manufacturer Part#: |
NTD4913N-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 32A IPAK |
More Detail: | N-Channel 30V 7.7A (Ta), 32A (Tc) 1.36W (Ta), 24W ... |
DataSheet: | NTD4913N-1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.36W (Ta), 24W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1013pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4913N-1G is a type of Field Effect Transistor (FET). It is a single-package, high-efficiency MOSFET, and is commonly used in high-speed switching applications. The advantages of this type of FET are its low threshold voltage, low gate charges, low gate-drain capacitances, and low on-resistance. These attributes make it an ideal choice for applications that require high current efficiency, low power consumption, and high-speed switching.
The NTD4913N-1G has an output drain-source voltage of up to 100V, a maximum drain current of 12.5A, and an RDSon (on-resistance) rating of 0.05Ω. It also features a Gate Threshold voltage of 2V and a Gate-Source Voltage of -20V. As such, it is commonly used as a switch or analog amplifier. It can also be used to control the power supply voltage.
The working principle of the NTD4913N-1G is based on the field effect theory. When the gate voltage is increased, electrons are injected from the gate side into the drain-source channel. This reduces the width of the channel and increases the resistance of the FET, reducing the current through it. By controlling the gate voltage, one can control the current through the FET, allowing it to be used as a switch. By controlling the voltage across the drain and source, one can also control the voltage supplied to the device.
The NTD4913N-1G is commonly used in high-speed switching applications due to its low switching time and low power consumption. It is usually used for power management applications in consumer electronics, such as digital televisions, DVD players, and set-top boxes. It also finds use in industrial applications, such as motor control and power supplies. Additionally, this FET can be used in high-end audio equipment, as it offers low distortion and high efficiency.
In conclusion, the NTD4913N-1G is a high-efficiency single FET. It offers low threshold voltage, low gate charges, low gate-drain capacitances, and low on-resistance. In addition, its fast switching time and low power consumption make it an ideal choice for high-speed switching applications. It can be used in consumer electronics, industrial applications, and high-end audio equipment.
The specific data is subject to PDF, and the above content is for reference
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