| Allicdata Part #: | NTD4809N-1G-ND |
| Manufacturer Part#: |
NTD4809N-1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 9A IPAK |
| More Detail: | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (... |
| DataSheet: | NTD4809N-1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.4W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1456pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
| Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NTD4809N-1G is a commonly used dual-gate MOSFET (Metal Oxide Semiconductor FET) used for many applications. It is a high-speed, low-power, low-noise, low-voltage logic switching device. It is a single channel device and is often used in high-frequency circuits and digital systems.
The NTD4809N-1G is a versatile device and is often used in a variety of applications. As a digital logic switch, the NTD4809N-1G can be used to control signals, routing signals, and providing isolation between circuits. It is also used in voltage control applications such as switching power supplies, and in analog circuits for controlling signals and power. The NTD4809N-1G also has many applications in the automotive and industrial markets.
The working principle of the NTD4809N-1G is simple; it allows current to pass through the MOSFET only when a certain voltage level is applied to the gate. When this voltage level is reached, the MOSFET opens its gate and the current passes through. When the voltage level drops below the threshold voltage, the MOSFET closes its gate and the current stops flowing. This process is repeated periodically (at a frequency determined by the circuit design) allowing the NTD4809N-1G to switch signals and/or power.
In addition to its basic function of providing a switching action, the NTD4809N-1G also has several other features which can be used to customize its functionality. It can be combined with various logic circuits to implement logic functions, such as: XOR, AND, OR, and multiplexers, allowing it to be used in a wide range of digital operations. The NTD4809N-1G also offers built-in protection for the circuit as it has a built-in "body diode" which protects the circuitry from overvoltage, and a built-in "snubber" circuit which limits the voltage swing across the device.
Overall, the NTD4809N-1G is a versatile and robust MOSFET which can be used for many different operations and applications. Its high-speed, low-power, low-noise, and low-voltage characteristics make it a good choice for various digital logic functions and power control/monitoring operations. As such, it is well suited for use in a variety of applications, including automotive, industrial and consumer electronics. With its wide range of features and applications, the NTD4809N-1G is an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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NTD4809N-1G Datasheet/PDF