NTD40N03R-1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.5W (Ta), 50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	584pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.78nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	16.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7.8A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD40N03R-1G is a type of transistor device that comes in the form of semiconductors. It is known to be a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which is widely used in modern electronic circuits. This article will provide an overview of its application fields and the working principle behind it.An NTD40N03R-1G is a depletion-mode MOSFET, which means that it is normally on and requires a negative gate voltage to turn it off. This transistor device features an avalanche voltage rating, a low thermal resistance, a large drain-source breakdown voltage, and a high power rating. It is designed to be used in various voltage and current applications, including motor control, power and automotive systems.The NTD40N03R-1G MOSFET has a rich application field that spans across a variety of industries. For example, in power electronics, the device can be used to drive motors, control power supplies, and regulate voltage and currents in machines. In automotive systems, it can be used for power management, correct fuel injection, and improve engine control. It is also popularly used in consumer electronics, including digital cameras and audio/video equipment. Additionally, the device is often used in medical equipment and robotics.The working principle of the NTD40N03R-1G MOSFET is based on the idea that a voltage applied across an insulated gate-electrode can create a controlled channel between the source and drain terminals. When the gate electrode is made negative, the channel is closed, allowing the flow of current. When the gate electrode is made positive, the channel will be open, and current will not flow. Thus, controlling the voltage applied across the channel gives the device its capability to regulate current flow.The NTD40N03R-1G MOSFET is also known for its high power efficiency and low power dissipation. Its low on-state resistance also helps in reducing power consumption and power dissipation. Additionally, the device supports high voltage and high current ratings, making it a versatile option for various applications.In general, the NTD40N03R-1G MOSFET is known for its efficient power management and reliable performance. Its excellent characteristics make it an ideal choice for a wide range of applications, from industrial to automotive and consumer applications. With its low power dissipation and high power efficiency, the device is widely used in power electronics, motor control, and automotive systems. It is also widely used in consumer electronics and medical equipment. Furthermore, its excellent characteristics make it ideal for use in robotics, medical equipment, and other electronic components.

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