NTD4815N-35G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.26W (Ta), 32.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	770pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14.1nC @ 11.5V
Series:	--
Rds On (Max) @ Id, Vgs:	15 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	6.9A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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NTD4815N-35G Application Field and Working Principle

NTD4815N-35G is a MOSFET, specifically a single N-channel enhancement type MOSFET. It is produced with integrated circuit technology and is based around the semiconductor component, silicon. It is a power semiconductor, which is most commonly used for amplifying or switching electrical signals. It is an especially important component in the electronics industry, where it is used in many different ways, ranging from improving the performance of logic and analog circuits to being the primary component in many higher power motor control systems.

When it comes to applications for the NTD4815N-35G, it is primarily used for power voltage regulator, switching and motor drive applications. It has a continuous Drain-Source voltage of 35 V, which makes it well suitable for performing in a variety of systems. It is a power transistor that has an exceptionally low on-resistance, high transconductance and other features suitable for a variety of conversion, drive, and switching applications, including synchronous rectification circuits, DC-DC converters, as well as high frequency, Class-D audio amplifiers. In addition, it is also used in power amplifiers, communication systems, automotive systems, and many other types of electronic circuits.

The NTD4815N-35G is a single N-channel MOSFET, which is an insulated-gate field-effect transistor. It is constructed with a source and a drain, which are connected to the semiconductor material. Between the source and drain is a Gate, which is insulated from the other two terminals. The voltage placed on the Gate creates an electric field in the semiconductor material, which then modifies the conductivity of the channel, thereby controlling the flow of current from the drain to the source. This is the basic working principle of a MOSFET.

Overall, the NTD4815N-35G is a very reliable and efficient low-power transistor. It is used in a variety of applications, as mentioned above, and can be used in conjunction with other components such as logic circuits, converters, and power amplifiers to build a wide variety of circuits. It is a very versatile component and can be used for many different types of applications.

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