Allicdata Part #: | NTD4857NA-1G-ND |
Manufacturer Part#: |
NTD4857NA-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 78A SGL IPAK |
More Detail: | N-Channel 25V 12A (Ta), 78A (Tc) Through Hole I-P... |
DataSheet: | NTD4857NA-1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 78A (Tc) |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1960pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTD4857NA-1G is a single-pole, single-throw (SPST) normally off enhancement-mode MOSFET switch that is capable of driving very high loads. It is used in a variety of applications, such as power supply switches and motor control devices. This switch is specially designed to handle high power loads, with a very low on resistance, and it is an ideal choice for power and current management.
The NTD4857NA-1G is designed to provide a higher level of power than other switches in the same package size. Its on resistance is low enough to drive large currents and its on-state power dissipation is sufficient to carry very large currents without worrying about the switch getting too hot. The off-state leakage current is also very low, which is ideal for pulse-width modulation applications.
The NTD4857NA-1G features an internal current limit and temperature protection circuit to protect the switch from extreme conditions. The internal circuitry also ensures that the switch turns off if the voltage on the drain gets too high, providing an extra layer of protection. The internal gate-to-source capacitance is also much lower than other MOSFET switches, making it well-suited for applications that require high-speed switching.
The NTD4857NA-1G is also highly efficient and fast, making it ideal for applications that require short switching times. It can also handle high pulse currents, making it perfect for switching high-power loads. It is capable of operating at temperatures up to 150°C and is compatible with most printed circuit board (PCB) designs.
The working principle of the NTD4857NA-1G is the same as any MOSFET switch. When the gate voltage is applied, the switch turns on, allowing current to flow between the drain and source. When the gate voltage is removed, the switch turns off, preventing any current from passing through.
The NTD4857NA-1G is an excellent choice for a variety of applications. It has the ability to withstand very high power loads, and its low on resistance allows for extremely efficient and accurate power management. It is also highly efficient, allowing for fast switching times, and can handle large pulse currents without sacrificing performance. The switch is also highly durable and can operate up to 150°C. Therefore, the NTD4857NA-1G is a logical choice for any application that requires an efficient, reliable, and durable switch.
The specific data is subject to PDF, and the above content is for reference
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