NTD4810NH-35G

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The NTD4810NH-35G is an enhancement-mode power MOSFET, designed specially for use as an DC-DC converter with high-current driving capability. It is a top-FET technology that can provide high-current driving efficiency, low on-state resistance (RDS(ON)) and high-safe operating area (SOA). It is designed to provide the best performance in both switching and linear operation.

In the context of its application field, the NTD4810NH-35G is usually used for DC-DC converters, which helps to convert the supply current from one voltage level to another. It is used in a wide range of automotive, industrial and consumer applications, ranging from powering mobile devices such as cell phones and notebook PCs to controlling machine tools and other industrial equipment. The NTD4810NH-35G is also suitable for use in high power computing applications, audio and video systems, and other electronic systems.

The working principle of the NTD4810NH-35G is similar to that of any other power MOSFET. It consists of an insulated gate, a source, and a drain. A voltage applied to the gate results in a current through the channel between the source and drain, which usually depends on the characteristics of the MOSFET. When the gate voltage is much larger than the threshold voltage, the current flowing through the channel between the source and drain will be much higher than what it would be when the gate voltage is at the same level as the threshold voltage.

In the case of the NTD4810NH-35G, the device offers a very high current drive capability with an on-resistance (RDS(ON)) of 35 ohms. This high current drive suitability is due to its wide SOA, which allows the device to be operated with very high gate voltages without any risk of breakdown. This makes the device highly suitable for high-current DC-DC conversion applications where fast and accurate power delivery is required.

The NTD4810NH-35G also offers a low static drain-source on-resistance, which helps to improve the efficiency of the DC-DC converters and helps to reduce the power consumption of the circuit. The low on-resistance of the device also helps to minimize the voltage drop across it, which is important in applications where accurate voltage delivery is critical.

The NTD4810NH-35G has a breakdown voltage rating of 123V, and an operating temperature range of -55°C to 125°C. The device is also available in surface-mount and through-hole packages, making it highly suitable for use in a wide range of applications.

In summary, the NTD4810NH-35G is an enhancement-mode power MOSFET designed specially for use as a DC-DC converter. It offers high-current driving capability, low static drain-source on-resistance, and a wide SOA. It is suitable for use in a wide range of automotive, industrial and consumer applications, where high-current switching and linear operation is required.

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