NTD4910N-35G

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The NTD4910N-35G is a single-chip solution from On Semiconductor that caters to automotive applications and motor start drive circuits. It stands out from the competition with its ability to control load currents without the need for an additional current-sensing circuit. Not to mention, it features low on-resistance, high-output current, fast switching speeds, and broad operating temperature range. It\'s a viable alternative to traditional MOSFETs and their complex gate drivers.

The NTD4910N-35G utilizes a unique design that incorporates a low-side G-MOSFET MOSFET and bipolar transistors in the same package. This provides the power necessary to drive automotive applications and other large loads. The use of the bipolar transistors and MOSFETs also ensures high-throughput, low-power dissipation, and fast switching.

The NTD4910N-35G is designed to handle high load currents and features high-current capability and low-voltage drop. It has a maximum DC on-resistance of 6.5 mΩ. This on-resistance is lower than that of a conventional MOSFET, making the NTD4910N-35G a more efficient choice when it comes to power dissipation. Additionally, the transistor\'s output voltage can go up to 40V, making it suitable for use in high voltage applications as well.

In addition, the NTD4910N-35G operates up to an ambient temperature of 150°C, making it suitable for device use in extreme environmental conditions. It’s suitable for high efficiency, low EMI applications, as it has a fast switching speed of 1.7µs, making it ideal for controlling stepper motors and other high load currents. Furthermore, it has an extensive product lifetime, with a maximum continuous power dissipation of 5.8W.

The NTD4910N-35G typically contains two components – the P-channel MOSFET and the N-channel MOSFET. Its working principle is based on the “body effect” principle. This is the effect of a small voltage applied to the body (substrate) of the MOSFET which influences the gate voltage of the MOSFET. For example, when the body of the MOSFET is charged, the gate voltage increases and the MOSFET is turned on. The NTD4910N-35G uses a combination of the two components to provide an internal charge pump that drives the body of the MOSFET, thereby providing faster switching speeds than conventional MOSFETs.

Overall, the NTD4910N-35G is an innovative, high performance, yet low cost solution for automotive applications and motor start drive circuits. It allows current control without the need for an additional current-sensing circuit, making it an ideal choice for such applications. Its high efficiency and low EMI levels, combined with its fast switching speed, make it a viable alternative to conventional MOSFETs and their complex gate drivers.

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