NTD4960NT4G Discrete Semiconductor Products

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The NTD4960NT4G is a high voltage, fast switching N-channel power MOSFET. This device is designed for high current, high speed switching and for high frequency DC-DC converter applications. With a drain source breakdown voltage rating of 250 V, it can deliver peak pulse currents of 8 A.The NTD4960NT4G is a high voltage, fast switching N-channel power MOSFET that is specifically designed for high current and high speed switching applications. This device is a MOSFET and it is built using a lateral N-channel configuration. It is a single transistor and it has a gate oxide layer that is relatively thick. This makes it highly resistant to breakdown and a perfect choice for applications that require high data switching speed.

The NTD4960NT4G is an ideal device for high frequency DC-DC converters and switching power supplies, as it is capable of delivering peak pulse currents of 8A with a drain source breakdown voltage rating of 250V. One of the main benefits of this device is that it is capable of switching at relatively high frequencies while maintaining a low on-state resistance. This helps to reduce power losses due to voltage drops and improves system efficiency.

In terms of its working principle, the NTD4960NT4G is based on a depletion mode MOSFET structure. This means that the MOSFET will be turned “off” when the gate-source voltage is less than the threshold voltage. When the gate-source voltage is greater than the threshold voltage, the drain current starts to flow and the MOSFET is turned “on”. The current flow is proportional to the difference between the gate-source voltage and the threshold voltage, and is limited by the resistance of the channel.

The NTD4960NT4G is an ideal choice for a wide range of applications. It is especially suitable for applications that require high current, high speed switching, such as automotive systems and mobile devices. It can be used in various types of power supplies, such as high frequency DC-DC converters and switching power supplies. Additionally, it can be used in various types of motor control, lighting control and industrial equipment.

The NTD4960NT4G is a versatile device that has a wide range of usages and applications. It is a high voltage, fast switching N-channel power MOSFET with a drain source breakdown voltage rating of 250 V and a peak pulse current of 8A. This makes it perfect for applications that require high data switching speed. Additionally, it is based on a depletion-mode MOSFET structure which means that it will reliably turn off when the gate-source voltage is less than the threshold voltage. Overall, the NTD4960NT4G is an excellent choice for a wide range of applications, from automotive systems to industrial equipment.

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