NTD4804N-1G Allicdata Electronics
Allicdata Part #:

NTD4804N-1G-ND

Manufacturer Part#:

NTD4804N-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 14.5A IPAK
More Detail: N-Channel 30V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 10...
DataSheet: NTD4804N-1G datasheetNTD4804N-1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTD4804N-1G is a high-speed and high-current N-channel MOSFET manufactured by ON Semiconductor. It is intended for use in a wide range of applications. This article will provide an in-depth look at the applications and working principles of the NTD4804N-1G.

Applications of NTD4804N-1G

The NTD4804N-1G is ideal for use in high-power switching applications. It can be used as a direct replacement for low-speed PNP transistors and can also be used in digital signal processing circuit designs. It has a low on-resistance and is capable of operating under high temperature and voltage conditions. It is suitable for use in high-speed gate-driver circuits and high-current switching applications. The gate-threshold voltage is 0.7V, and its Drain-Source voltage is 60V.

The NTD4804N-1G is also suitable for a wide range of applications, including:

  • DC-DC converters
  • LED backlights
  • DC motor control
  • Robotics
  • Computer peripherals
  • 3D printers
  • Laser printers
  • Automobile motors
  • Power supplies
  • High-voltage switching circuits

Working Principle of NTD4804N-1G

The NTD4804N-1G is a high-speed N-channel MOSFET. It is capable of operating at high temperatures and voltages. It uses an electrolytic gate potential instead of a mechanical gate control in order to switch off the channel between the source and the drain. When a voltage is applied to the gate, an electric field is generated, causing electrons to flow across the oxide layer and into the channel. This in turn creates a conductive path between the source and the drain, and the MOSFET enters the ON state. By reversing the voltage applied to the gate, it is possible to switch the MOSFET back to the OFF state and cut off the current flowing through the channel.

The NTD4804N-1G has a low on-resistance and is capable of operating at high temperatures and voltages. Its low gate-threshold voltage ensures that it switches quickly, allowing for high-frequency switching. It is also highly reliable, with a maximum operating temperature rating of 175°C.

The NTD4804N-1G is a versatile and reliable device and is suitable for use in a wide range of applications. It is easy to use and has a low on-resistance, making it an ideal choice for high-speed gate-driver and high-current switching applications.

The specific data is subject to PDF, and the above content is for reference

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