NTD4959NT4G Allicdata Electronics
Allicdata Part #:

NTD4959NT4G-ND

Manufacturer Part#:

NTD4959NT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 9A TP-FA
More Detail: N-Channel 30V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc...
DataSheet: NTD4959NT4G datasheetNTD4959NT4G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V
Series: --
Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTD 4959NT4G is a specific type of field-effect transistor (FET) commonly referred to as a metal oxide semiconductor field-effect transistor (MOSFET). FETs are transistors that use a field effect rather than a traditional current flow to generate a conductive channel. FETs are divided into three subcategories: n-channel (depletion mode), p-channel (enhancement mode) and depletion-type MOSFETs. The NTD 4959NT4G is a single-type MOSFET, meaning it features only one gate terminal.

A MOSFET is a three-terminal electronic device in which current is controlled by a third terminal, referred to as the gate. The NTD 4959NT4G operates in an enhancement mode, meaning a positive bias on the gate relative to the source causes the device to conduct. Due to the low switching power dissipation and low drive voltage, the NTD 4959NT4G is suitable for a wide range of applications.

The NTD 4959NT4G has various applications in computers and telecommunications, and has been often used in designing high-efficiency switching power supplies. It is also suitable for dc-dc converters, lighting solutions, audio amplifiers, and motor driver circuits.

The working principle of the NTD 4959NT4G is based on the idea of controlling the current flow through a semiconductor by altering the electric field generated from the gate terminal. The gate to source voltage (VGS) determines the change in threshold voltage (VGSth) or the voltage at which the device begins to turn on.

When VGS is greater than VGSth, the channel closes and current does not flow through the device. When the gate voltage is reduced below the threshold voltage, a small drain-source current begins to flow. This current increases exponentially as the voltage continues to decrease, resulting in a very fast switching time.

The NTD 4959NT4G is able to operate with very low power and can also provide very low gate input capacitance. This low capacitance makes the NTD 4959NT4G suitable for applications where fast switching times are required. The device also features a very low on-resistance, meaning it can support both high-current and low-voltage, making it suitable for many power switching and conversion applications.

High-bandwidth audio amplifiers also require fast switching times, which makes the NTD 4959NT4G a great choice for this application. The low-voltage, low-current advantages of the NTD 4959NT4G make it an ideal choice for applications requiring very precise control of the current flow.

Overall, the NTD 4959NT4G is an ideal choice for numerous applications, due to its low switching power dissipation, low drive voltage, low gate input capacitance, and low on-resistance. The NTD 4959NT4G is an enhancement mode MOSFET, which can provide extremely fast switching times and precise current control. It is suitable for various applications, including high-bandwidth audio amplifiers, dc-dc converters, motor driver circuits, and lighting solutions.

The specific data is subject to PDF, and the above content is for reference

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