NTD4806NT4G Allicdata Electronics

NTD4806NT4G Discrete Semiconductor Products

Allicdata Part #:

NTD4806NT4GOSTR-ND

Manufacturer Part#:

NTD4806NT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 11.3A DPAK
More Detail: N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W ...
DataSheet: NTD4806NT4G datasheetNTD4806NT4G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTD4806NT4G is a field-effect transistor (FET) of the single gate family. Designed and manufactured by ON Semiconductor, the NTD4806NT4G is typically used for applications where high power density is needed along with high switching and operating speeds. The switching gains from this device often make it an beneficial choice when designing circuits that require low-frequency operation. In addition, its low power consumption makes the NTD4806NT4G suitable for use in battery powered applications. A few of the possible applications include audio power amplifiers, power supplies, and DC-to-DC converters.

When discussing the NTD4806NT4G, it is important to touch on its working principle as well. Field-effect transistors utilize the flow of electric current to create an electric field, and depend on the strength of this field to determine the amount of current flowing through the device. As the signal voltage applied to the device changes, the electric field strength changes as well, in turn affecting the amount of current that is able to flow. As the signal voltage decreases, the electric field strength weakens and current flow decreases, allowing the transistor to act as a switch. Conversely, as the signal voltage increases, the electric field strength increases and more current is allowed to pass through, allowing the transistor to act as an amplifier.

The NTD4806NT4G is typically used as either a switch or amplifier, depending on the application. This makes the device a great choice for applications where both switches and amplifiers are needed. Its high switching and operating speeds allow for the device to be used in fast-switching or high-speed circuits. Furthermore, the NTD4806NT4G\'s low power consumption and high power density make it ideal for use in battery powered applications and in situations where space is limited.

In conclusion, the NTD4806NT4G is a field-effect transistor of the single gate family. It is typically used for applications where higher power density and operating speed are beneficial. Depending on the intended application, it can be used as either a switch or an amplifier. Its low power consumption and high power density make the device suitable for use in battery powered applications and in situations where space is limited. As such, the NTD4806NT4G is a great choice for low-frequency circuit designs and for applications that require both a switch and an amplifier.

The specific data is subject to PDF, and the above content is for reference

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