NTD4808N-35G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.4W (Ta), 54.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1538pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	8 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

?NTD4808N-35G Application Field and Working PrincipleThe NTD4808N-35G is a high-performance and cost-effective N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in high voltage fields. It is well-suited for applications such as motor control, power management, and energy conversion. This article will examine the NTD4808N-35G application field, its working principles and functions.The NTD4808N-35G is a low on-resistance N-channel MOSFET with maximum drain source voltage of 600V, gate threshold voltage of 2.5V, maximum drain current of 2.6A, and maximum power dissipation of 9.4W. Its design makes it a suitable choice for high-current switching, as it can handle high currents with low on-resistance. This makes it well-suited for high voltage power switching applications, such as motor control, power management, and energy conversion.The NTD4808N-35G is built using 8mm x 8mm trench MOSFET technology, making it a reliable and cost-effective solution. Its packaging is surface mount, making it easy to install in applications. The NTD4808N-35G is UL-certified, enabling reliable use in high-voltage applications.In terms of its working principles and functions, the NTD4808N-35G uses a metal-oxide semiconductor FET structure. This structure utilises a four-layer structure that provides a low on-resistance with a high dielectric breakdown voltage. The four-layer structure is composed of source and drain terminals, a gate terminal, and the oxide layer. By adjusting the voltage at the gate terminal, the MOSFET will allow or prevent current from flowing from the source terminal to the drain terminal.The NTD4808N-35G is well-suited for applications that require fast and accurate power switching. It is suitable for various high-voltage applications, such as motor control, power management, and energy conversion. The NTD4808N-35G is also well-suited for low voltage applications, such as switching low power DC devices. In addition, the NTD4808N-35G is UL-certified and comes with RoHS and REACH compliance, making it safe to use in high voltage applications.In conclusion, the NTD4808N-35G is a high-performance, low on-resistance N-Channel MOSFET that is well-suited for applications such as motor control, power management, and energy conversion. It utilises a metal-oxide semiconductor FET structure, making it reliable and cost-effective. The NTD4808N-35G is UL-certified and is RoHS and REACH compliant. It is suitable for both high and low voltage applications, making it a versatile solution.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description