NTD4810N-35G

The NTD4810N-35G is a single high voltage P-channel MOSFET device from ON Semiconductor that is designed and produced with the latest MOSFET technology to provide increased power efficiency with fast and effective switching capabilities. This device consists of a P-channel enhancement-mode lateral MOSFET with ultra low drain to source on-resistance and high speed switching times. The NTD4810N-35G is available in two leaded packages, a TO-252AA-2 and a TO-252AA-4, with a maximum threshold voltage of -15V for the -35G device.

Applications for the NTD4810N-35G are varied with its capabilities. This device is particularly useful for DC to DC converters, LCD bias power supplies, and power switches. With its high speed switching qualities, it is ideal for a variety of motor speed controls, DC/DC converter and inverter circuits, as well as lamp, heater and relay drive applications. The NTD4810N-35G is also suitable for high frequency applications such as PFC boost circuits, CCFL inverters, and half bridge circuits.

The NTD4810N-35G provides excellent performance in a wide range of temperatures, making it suitable for use in a variety of environments. The device can withstand a maximum junction temperature of 125°C and has a maximum gate source voltage of 32V. The leaded package is designed for use with a wide range of heat sink materials allowing for efficient heat dissipation. In addition, the TO-252 package offers a robust construction for reliable operation in a number of applications.

The NTD4810N-35G offers ultra low on-resistance along with the advantages of an ultra low Miller charge. The Miller charge is a measure of the gate to source capacitance between the PMOS and the NMOS. This low gate to source capacitance leads to improved gate dV/dt immunity and fast gate charging. The device is specifically designed to handle large operating currents with low power dissipation. The on-resistance is also low enough to ensure efficient power usage with minimal power loss.

The NTD4810N-35G also offers high immunity to voltage spikes. The N channel devices are specially designed to handle high voltage spikes, up to 600V. The immunity to voltage spikes is achieved through a high breakdown voltage of up to 600V. This makes the NTD4810N-35G well suited for use in automotive applications.

This device uses a unique enhancement mode MOSFET structure to deliver high peak current ratings which is necessary for applications involving large switching current requirements. In addition, the NTD4810N-35G has an extremely low drain to source on-resistance which enhances efficiency by reducing the power dissipation. The reduced power dissipation also increases the device\'s reliability and makes it an ideal choice for applications where high efficiency and performance is required.

The NTD4810N-35G is an often-used device that is highly efficient and well-suited for applications requiring fast, effective switching abilities. Through its unique structure, the device is able to maintain high peak current ratings and low on-resistance, allowing for the effective operation of the MOSFET device. In addition, the low gate to source capacitance enhances the dV/dt immunity and high voltage spikes. With its wide range of applications, the NTD4810N-35G P-channel MOSFET device is an ideal choice for high power switching applications.