NTD4810NH-1G Allicdata Electronics
Allicdata Part #:

NTD4810NH-1G-ND

Manufacturer Part#:

NTD4810NH-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 8.6A IPAK
More Detail: N-Channel 30V 9A (Ta), 54A (Tc) 1.28W (Ta), 50W (T...
DataSheet: NTD4810NH-1G datasheetNTD4810NH-1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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NTD4810NH-1G is a high-performance enhancement-mode MOSFET (metal-oxide semiconductor field-effect transistor) that is optimized for low drain-to-source resistance and low-voltage operation. It is a high-voltage device that is used in both rectifier circuits and other high-voltage applications. The NTD4810NH-1G is available in a SO-8 package, which is ideal for compact circuit designs. The device is also suitable for use in SMPS (Switching Mode Power Supply) applications and is capable of switching currents up to 8A.

The NTD4810NH-1G features a low Rdson (drain to source on-resistance) of 4.5mΩ which allows the device to operate without significant losses. When operated in an appropriate environment, the NTD4810NH-1G can operate at up to 100V Drain-to-Source. This makes it an ideal device for high-current applications, such as LED lighting and HVAC systems.

The working principle of the NTD4810NH-1G is based off of the standard MOSFET device structure. It consists of three independent layers; a drain, a source, and a gate. The gate controls the flow of current between the drain and the source and can be used to both turn on and turn off the device. When a positive voltage is applied to the gate, current flows from the drain to the source. When the voltage is removed, the gate\'s voltage is no longer capable of attracting carriers and the device is turned off. This process is what allows the MOSFET to be used as a switch when used in an appropriate circuit configuration.

The NTD4810NH-1G is commonly used in a variety of applications, including high current and high voltage applications. In the automotive industry, the device is used in automotive high voltage power inverters, and in the industrial sector, it is used in rectifier circuits, DC-DC converters, high-speed switching circuits, and in high power amplifiers.

The NTD4810NH-1G is also well-suited for use in power supply applications. The device can be used to regulate low- and high-voltage circuits, as well as supply power to motors and circuits that require high-current. It is also commonly used in data center architectures and in server racks, as it can provide efficient power management systems. In addition, the NTD4810NH-1G is also used in Wi-Fi, Bluetooth, and other wireless communication systems.

Overall, the NTD4810NH-1G is an excellent choice for high-voltage and high-current applications. It offers low Rdson and high-voltage operation without significant losses, making it ideal for use in a variety of applications. With its ease of use and reliable performance, the NTD4810NH-1G is an excellent choice for any circuit design.

The specific data is subject to PDF, and the above content is for reference

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