
Allicdata Part #: | NTD4854N-35G-ND |
Manufacturer Part#: |
NTD4854N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 15.7A IPAK |
More Detail: | N-Channel 25V 15.7A (Ta), 128A (Tc) 1.43W (Ta), 93... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.43W (Ta), 93.75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 49.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.7A (Ta), 128A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4854N-35G is a part of the single MOSFETs, which belong to the transistors FETs family. It is used in several different applications, mostly related to the need of controlling the polarization of a load.
Main Application Field
The NTD4854N-35G is mainly used in RF applications such as amplifiers and power control. Its unique design makes it highly capable of withstanding high heat levels, which allows it to be used in more aggressive high-power environments. It is also used in the monitor and control of devices in general, and has been seen as a substitute for opto-couplers devices in sensitive circuits. It provides two typically dual gate devices in a single package for added flexibility and space saving.
Working Principle
The NTD4854N-35G works on the principles of polarization. It takes a voltage or current input and switches it on and off in order to control the voltage of or the current in a connected load. The MOSFET transistor device uses a gate voltage to control the current flow through the MOSFET. The device controls the flow of current between the source and drain when a gate voltage is applied to one of its terminals. If the gate voltage is high enough, the MOSFET switches on and current flows through the device. The gate voltage can be used to regulate the current flow and thus, the voltage, through the FET.
System Integration
The NTD4854N-35G integrates well into most systems due to its single package design. This allows for more efficient integration into both digital and analog systems, enabling power equipment manufacturers to capitalize on the NTD4854N-35G’s high current and power handling capabilities. The NTD4854N-35G can be used as a primary element in the design of motor control systems, power factor correction systems, and noise reduction applications.
High Performance
The NTD4854N-35G is designed for high performance. Its design allows it to withstand high heat levels, making it ideal for high-power applications. Moreover, its dual-gate device design also enables it to offer higher performance than traditional MOSFETs. Its high efficiency and lower conduction losses make it a valuable asset when designing power control systems and integrated circuits.
Conclusion
The NTD4854N-35G is a single MOSFET transistor which belongs to the transistors FETs family. It is mainly used in RF applications such as amplifiers and power control. It uses a gate voltage to control the current flow through the MOSFET, and its dual-gate design also enables it to offer higher performance than traditional MOSFETs. Its single package design also allows for easier integration into devices, making it a valuable asset when designing power control systems and integrated circuits.
The specific data is subject to PDF, and the above content is for reference
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