
Allicdata Part #: | NTD4856N-35G-ND |
Manufacturer Part#: |
NTD4856N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 13.3A IPAK |
More Detail: | N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.33W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2241pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.3A (Ta), 89A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4856N-35G is a transistor part of the FETs, MOSFETs family, specifically under the Single category. When dealing with these components, it is necessary to understand the application field and working principle of the NTD4856N-35G. In this article, we will take a look into what the NTD4856N-35G brings to the table.
Application Field
The NTD4856N-35G is a high-power switch used in applications such as motor control, Lighting control, and switching power supply circuits. This high-power switch is an enhanced version of its brother NTD4856N-35 that has improved fast switching performance. It boasts an R DS(on) of 2.25mΩ @ 10V and 4.8A, making it suitable for a wide range of use cases.
Due to the NTD4856N-35G high-power switching capability, it is the ideal choice for applications with high current levels. The NTD4856N-35G can comfortably deal with high current switching duties which makes it a great choice for motor control applications.
Working Principle
The NTD4856N-35G is a MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. A MOSFET is an electronic device that uses the flow of electrons through an insulated gate to control current flow through a semiconductor. This makes it possible to control the amount of current that passes through the transistor, making the NTD4856N-35G the ideal device for switching high currents.
The NTD4856N-35G works by having a gate voltage controlling the amount of current flow. The lower the gate voltage, the less current that will flow. The higher the gate voltage, the more current that will flow. This allows the user to precisely control the current to get the desired output.
In addition to the gate voltage, the NTD4858N-35G also uses the source voltage to control current flow. The source-drain voltage is what governs the on-resistance of the device. By increasing the source-drain voltage, the on-resistance will decrease, making it possible for a higher current to flow.
Conclusion
In conclusion, the NTD4856N-35G is an excellent choice for applications that require high power switching. It boasts an impressive R DS(on) and the ability to precisely control current by using the gate and source voltage. By understanding the application field and working principle of the NTD4856N-35G, one can effectively use this device in their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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