NTD4860NT4G Allicdata Electronics

NTD4860NT4G Discrete Semiconductor Products

Allicdata Part #:

NTD4860NT4GOSTR-ND

Manufacturer Part#:

NTD4860NT4G

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 10.4A DPAK
More Detail: N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W...
DataSheet: NTD4860NT4G datasheetNTD4860NT4G Datasheet/PDF
Quantity: 2500
1 +: $ 0.14400
10 +: $ 0.13968
100 +: $ 0.13680
1000 +: $ 0.13392
10000 +: $ 0.12960
Stock 2500Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTD4860NT4G is a signal transistor with a wide field of applications. This small signal transistor is ideal for a variety of applications including power management, wireless communications and signal processing. The NTD4860NT4G is a Field Effect Transistor (FET) and a single Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed for a wide range of operations, from low voltage to high frequency operations.

A Field Effect Transistor (FET) is a three terminal semiconductor device used for electronically controlling analog and digital circuits. The NTD4860NT4G is an enhancement type MOSFET which uses an insulated gate to control the flow of electrons in the device. In the NTD4860NT4G, the insulated gate is built on an insulating layer of silicon dioxide. This layer of insulation provides high impedance and low capacitance, allowing for high frequency operations. The NTD4860NT4G has both N-channel and P-channel versions.

The N-channel version is used in applications where the FET needs to act as a switch to connect an input signal to an output. The MOSFET acts as a gated current source, where the amount of current is controlled by the voltage applied to the gate. When the gate voltage is high, a larger amount of current flows through the FET. When the voltage of the gate is low, the FET is off and no current flows through it. The NTD4860NT4G is a low voltage transistor and can operate with gate voltages as low as -0.05 volts.

The P-channel version is used in applications where the FET needs to act as a switch to connect an output source to an input. The MOSFET acts as a gated voltage source, with the voltage of the gate controlling the voltage of the output. This voltage can be adjusted by varying the gate voltage.The NTD4860NT4G can be used in high frequency modulation and pulse control applications because of its high dielectric strength and low capacitance. It can also be used for low power applications because of its low on-resistance and low power consumption.

The NTD4860NT4G is perfect for a wide range of applications due to its small size, low power consumption and wide range of operations. It is a great choice for power management, wireless communications and signal processing applications. It is a reliable, efficient and cost effective solution for any application.

The specific data is subject to PDF, and the above content is for reference

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