NTD4906N-35G

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The NTD4906N-35G is a type of MOSFET (metal-oxide-semiconductor field-effect transistor), specifically a single NMOSFET. This type of transistor has many uses, notably in high-performance applications such as power amplifiers, low-noise amplifiers, low-noise switching applications, and other high speed digital processes. This article will provide an overview of the NTD4906N-35G\'s application fields, as well as its working principle.

The NTD4906N-35G is classified as a part of the N-Channel LSTTL (low-speed transistor-transistor logic) logic family, which is a type of MOSFET. This type of MOSFET is suitable for high-speed switching and amplification, as well as for logic applications. Its maximum drain current is 1.4A and its maximum drain-source voltage is 28V. Its maximum junction temperature is 125°C and its thermal resistance is 7.0°C/W. It has a total gate charge of 5nC at 10V and 4nC at 28V.

In terms of its application fields, the NTD4906N-35G can be used in the power amplifier, low-noise amplifier (LNA), switching regulator, and DC-DC converter circuits. It is also ideal for high-speed and high-current digital logic applications, such as logic gates and signal transistors. Additionally, it can be used in voltage level and signal level conversion, and in inter-circuit switching.

The NTD4906N-35G works by employing the principle of the MOSFET. Namely, it uses an insulated gate to control the conductivity of the channel that separates the source from the drain. This is known as the ‘gate effect’. The thickness of this gate will vary depending on the voltage applied on the gate terminals, which will influence the threshold voltage. Once the threshold voltage is exceeded, the current will begin to flow between the source and the drain. The size of the current will depend on the applied voltage and the properties of the MOSFET, such as its resistance, capacitance and breakdown voltage.

In summary, the NTD4906N-35G is a type of MOSFET single NMOSFET which is suitable for high-speed switching and amplification, as well as for logic applications. It can be used in power amplifier, low-noise amplifier (LNA), switching regulator, and DC-DC converter circuits. It works by employing the principle of the MOSFET, where the thickness of the gate will vary based on the voltage applied on the gate terminals, which will influence the threshold voltage. Once the threshold voltage is exceeded, the current will begin to flow between the source and the drain.

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