Allicdata Part #: | NTD4909N-35G-ND |
Manufacturer Part#: |
NTD4909N-35G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 41A SGL IPAK |
More Detail: | N-Channel 30V 8.8A (Ta), 41A (Tc) 1.37W (Ta), 29.4... |
DataSheet: | NTD4909N-35G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.37W (Ta), 29.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1314pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Ta), 41A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4909N-35G is a single N-channel Enhancement Mode Power MOSFET. It is a transistor that functions as a switch or amplifier depending on the application. This particular FET is typically used in applications that require maximum efficiency, such as battery powered applications or switches used to power LEDs. The NTD4909N-35G can be used in motor control, power management, and power supply switching applications.
The NTD4909N-35G has a P channel FET construction, which is a special type of field-effect transistor. It consists of three terminals - the source, drain, and gate - which are used to control the current flowing through the channel. The source serves as the input terminal and the drain serves as the output terminal. The gate is the voltage-sensing input terminal, and the voltage applied to it controls the resistance between the source and drain. This allows the device to be used as an amplifier or a switch depending on the application.
The NTD4909N-35G is typically used in applications where efficiency is of the utmost importance. It has an on-resistance of 13 milli-Ohms, which is low enough to reduce power losses during switching operations. It also has a low gate charge and low gate-input threshold voltage, which makes it suitable for high-frequency switching operations. Additionally, it has an integrated anti-parallel body diode which eliminates the need for an external diode when switching inductive loads. This reduces component count and simplifies the circuit.
The NTD4909N-35G offers a simple and efficient solution for switching operations that require high efficiency. It is well suited for applications with low gate drive requirements, such as battery powered applications and LED lighting systems. It also has a low on-resistance, which reduces power losses and increases efficiency. Additionally, the integrated anti-parallel body diode eliminates the need for an external diode when switching inductive loads, further reducing component count and simplifying the circuit. All of these features make the NTD4909N-35G an excellent choice for power management, power supply switching and other applications that require efficiency and minimal component count.
The specific data is subject to PDF, and the above content is for reference
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