NTD4959NH-35G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.3W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2155pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 11.5V
Series:	--
Rds On (Max) @ Id, Vgs:	9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 58A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD4959NH-35G is a type of transistor, more specifically a field effect transistor or FET. It is a single type of FET, meaning it is made up of a single field effect current. FETs are used in many applications as they have the ability to handle high power loads with a relatively low input voltage.The NTD4959NH-35G is an N-channel enhancement-mode power MOSFET, meaning it works by providing an electrical field in order to control the flow of current. This makes it a great choice for applications which require the fast switching of large currents, such as power switching in electronic circuits. The size of this FET also makes it suitable for applications with limited board space.In most N-channel MOSFETs, the Gates are made up of silicon, which acts as the field effect transistors. This means that the Gates provide a variable resistance, depending on the input voltage applied. Therefore, when an input voltage is applied to the Gate, it creates an electrical field which enables the flow of current through the FET.When it comes to use of the NTD4959NH-35G device, the main application field is high-power, high-efficiency and fast switching power circuits. It is used in motor drives, switch mode power supplies and high power converters. The device can also be used in switched-mode battery chargers and DC/DC converters.To ensure the successful operation of the NTD4959NH-35G device, certain considerations must be taken into account. As the device is sensitive to thermal and electrical shocks, it is important to ensure the correct bias conditions and PCB layout to keep it running effectively and safely. As with all power MOSFETs, a heatsink is needed to prevent the device from overheating when handling large currents.The NTD4959NH-35G is a strong and reliable device, ideal for applications which require fast switching of high-power loads. With its unique construction, it can provide fast switching and long product life, making it a great choice for many power switching applications.

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