NTD4979N-35G Application Field and Working Principle

The NTD4979N-35G is an enhancement mode N-channel MOSFET transistor with ultra-low ON resistance commonly used in high-performance power switching application, such as power conversion and management circuits, computer system power supply, battery management systems. This MOSFET features an operating temperature of -55°C to 150°C and an avalanche SOA rating.

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is an electronic switch device, which has three terminals: the gate (G), the drain (D) and the source (S). The gate is used to control the device, and the source and drain are the two output terminals for the passage of electric current.

To operate the NTD4979N-35G, a positive voltage is applied to the gate, which results in an electric field that attracts electrons toward the gate and away from the source, thus forming a conductive channel between the drain and the source. This process is known as Enhancement Mode, as the transistor will only operate when the gate voltage is increased from zero, and so no current is drawn from the gate.

To turn off the transistor, the gate voltage is reduced to zero. This reduces the electric field, releasing the electrons from the drain to the source and breaking the conductive channel between them. This process is known as Depletion Mode as no current flows without gate voltage.

One of the main advantages of the NTD4979N-35G is its low on-resistances, meaning it can pass higher currents with lower losses. Its low threshold voltage and fast response time also makes it suitable for use in power supply systems and power conversion devices.

Overall, the NTD4979N-35G is a high-performance devices optimized for power switching applications. Its low on-resistance, fast switching time and wide temperature operating range make it suitable for use in a variety of applications such as power conversion, power management and computer system power supply.