Allicdata Part #: | 1727-3046-2-ND |
Manufacturer Part#: |
PDTC144TM,315 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW SOT883 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC144TM,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02090 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Base Part Number: | PDTC144 |
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The PDTC144TM,315 is an NPN Epitaxial Silicon Transistor that is part of a new family of transistors.Designed to provide high current gain and low saturation voltage, the PDTC144TM,315 has been specifically designed to provide both high-speed switching and low-noise operation and is ideal for applications where a wide range of devices can be used.
The PDTC144TM,315 is a single-polarity, bipolar junction transistor (BJT) pre-biased for easy and flexible use. This type of transistor uses a single layer of semiconductor material to create a junction between the emitter and collector, allowing a current to flow from the emitter to the collector when a suitable bias is applied. The PDTC144TM,315 makes use of two diffused layers of silicon in a vertical line to form the basic epitaxial structure. The two layers are then connected via a buried collector layer to form the BJT.
The PDTC144TM,315 operates using an insulated gate field-effect transistor (IGFET) for the base semiconductor element. A current flowing through the gate is used to induce a current in the collector region, with the collector current being proportional to the gate current. This transistor arrangement enables the PDTC144TM,315 to provide a very low power consumption and improved switching performance at high speeds.
With a collector-base voltage of 60V, the PDTC144TM,315 can operate up to a maximum collector current of 15A. This makes it ideal for use in high-power circuits such as automotive and industrial equipment, as well as for audio and power amplification applications. The PDTC144TM,315 has an extremely low input capacitance, making it well suited for use in fast switching circuits, and a collector-to-emitter saturation voltage of only 0.25V.
In addition to its excellent high-speed switching and low power consumption characteristics, the PDTC144TM,315 has a number of features which make it suitable for a variety of applications. It employs a double-diffused planar technology, which provides superior device stability and is also resistant to temperature variations. The PDTC144TM,315 also features a built-in current-limiting circuit, allowing it to be used in extreme conditions where the input current is likely to exceed the safe operating limit.
The PDTC144TM,315 is an ideal choice for a wide range of applications due to its low power consumption, high-speed switching and low-noise operation. With its excellent thermal stability and exceptional performance, it is a great choice for high-power circuits and other applications where reliability and performance are key.
The specific data is subject to PDF, and the above content is for reference
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