Allicdata Part #: | PDTC143TT,235-ND |
Manufacturer Part#: |
PDTC143TT,235 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC143TT,235 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01717 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | DTC143 |
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The PDTC143TT,235 Bipolar Junction Transistor (BJT) is a single, pre-biased circuit device used in a variety of electronic applications. This BJT has a common base collector configuration to allow for optimal performance in the most stringent of conditions. This circuit device can be used in numerous applications such as RF amplifiers and switches, microwave power amplifiers, high efficiency amplifiers, low noise amplifiers, variable gain amplifiers, line drivers, and attenuators.
The PDTC143TT,235 is particularly useful in both classical and microwave-based applications due to its range of features and capabilities. The main features of this transistor are its small size, high current gain, and high voltage breakdown voltage. The small physical size allows it to be used in small, space-constrained applications where larger-sized transistors would be impractical or unfeasible. The high current gain and high voltage breakdown voltage of the PDTC143TT,235 make it an excellent choice for applications that require a large amount of power.
The working principle behind the PDTC143TT,235 is based on the principle of current flow. When two charges are connected to a dielectric material, a current will flow from the positive terminal of the dielectric material to the negative terminal. This current, known as the collector current, is then used to drive an output current from the base of the transistor to its emitter. The output current is determined by the ratio of the collector current to the emitter current. This ratio is known as the current gain, or the “h FE ” value.
There are two ways to modify the collector current: by changing the resistance of the base-collector junction, known as the “gain control”, or by adding a current source to the base, known as “current source biasing”. “Gain control” requires that the resistance at the base be increased in order to reduce the collector current and thus reduce the output current. On the other hand, “current source biasing” requires that a small current be added to the base to increase the current flowing through the collector junction and thus increase the output current.
The PDTC143TT,235 also has a power output capability of 2 Watts, which makes it well-suited for noisy environments. Additionally, this single, pre-biased BJT is rated for use in both industrial and consumer applications, giving it a wide range of capabilities. All these features combined make the PDTC143TT,235 the perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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