Allicdata Part #: | PDTC143XMB,315-ND |
Manufacturer Part#: |
PDTC143XMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC143XMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Base Part Number: | DTC143 |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 230MHz |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PDTC143XMB,315 Transistor is an advanced bipolar junction transistor (BJT) that is useful for many electronic equipment applications. It is a single device, pre-biased for use in demanding applications where reliability and other requirements need to be taken into consideration. The PDTC143XMB,315 is designed for high frequency applications such as radio frequency transmitters and receivers, audio amplifiers, and video applications.
It is a N-channel transistor with a low saturation voltage and high current gain. The rated voltage range is between 28 and 32 volts, with a power dissipation rate of around 2 watts. The PDTC143XMB,315 has excellent linearity that makes it particularly suitable for signal switching and amplification. It is also noted for its immunity to changes in ambient temperature.
The most common application of the PDTC143XMB,315 is as a saturable switch in RF or microwave amplifiers or oscillators. The transistor is generally placed in the path of the RF signal, and when it is turned on, it allows the RF signal to pass through. The switching voltage and current can be adjusted for optimum performance, and the transistor can be used to amplify the signal as well. It is also used as a switching element in many high frequency amplifiers and as a detector in radio receivers.
The working principle of a bipolar junction transistor is fairly simple. The PDTC143XMB,315 contains two P-type and two N-type semiconductor regions, which form the two junctions of the transistor. When a voltage is applied to the two junctions, current will flow between them, depending on the current gain of the device. The gain is determined by the relative doping concentrations of each of the two regions.
The PDTC143XMB,315 is also used as a driver stage to increase the current that can be supplied to the next stage in a high-power amplifier. It is also used as a buffer stage in wide-band amplifiers and as an UPSEC in radio receivers. In addition, it is a very viable solution for design engineers who are looking for a low-power, pre-biased transistor for use in applications where high-power, high-voltage performance is required.
The PDTC143XMB,315 is a popular choice for engineers and designers because of its low saturation voltage, high current gain and linearity, good temperature stability, and low power consumption. Its benefits also include its low cost and ease of operation. In addition, it is a reliable and economical part of the family of BJTs.
In conclusion, the PDTC143XMB,315 Transistor is a versatile, pre-biased single device that is typically used in demanding applications where reliable performance and other parameters are important. It offers excellent linearity and temperature stability, and it is a popular choice for many engineers and designers who are looking for a low-power, reliable transistor for use in a wide range of electronic equipment applications.
The specific data is subject to PDF, and the above content is for reference
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