SI4943CDY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4943CDY-T1-E3TR-ND

Manufacturer Part#:

SI4943CDY-T1-E3

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 20V 8A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surfac...
DataSheet: SI4943CDY-T1-E3 datasheetSI4943CDY-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.60000
10 +: $ 0.58200
100 +: $ 0.57000
1000 +: $ 0.55800
10000 +: $ 0.54000
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4943
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SI4943CDY-T1-E3 application field and working principle

The SI4943CDY-T1-E3 is a high performance array of 20 N-channel MOSFET transistors. It is designed for a wide range of applications from medium power to high power. The transistors are optimized for low voltage, high current battery applications. The package contains 8 N-Channel MOSFET devices, one for each channel. It is designed to provide superior performance for medium to high current applications and it is highly durable and reliable. It is ideal for applications such as notebook PCs, cellular phones, and personal digital assistants.

The SI4943CDY-T1-E3 features an advanced architecture that provides improved device performance, low voltage operation, and superior current handling capability. The MOSFETs have a high output current capability and a low on-resistance. The low output on-resistance makes it ideal for high current switching. The MOSFET can switch very rapidly and efficiently and handle inrush currents.

The MOSFET transistors are designed to provide maximum efficiency and power delivery in large power conversion applications such as DC-DC converters, AC-DC converters, and automotive applications. The transistors offer fast switching speeds and excellent thermal characteristics. They also offer high ESD tolerance and high reliability.

The working principle of the SI4943CDY-T1-E3 is based on the fact that the transistors are arranged in a series. The transistors are N-channel MOSFETs, meaning that an applied voltage Vgs, or gate-to-source voltage, is used to control the device. When Vgs exceeds the threshold voltage, Vth, of the MOSFET, the MOSFET will switch on, allowing current to flow from the drain to the source of the MOSFET. This allows for high and low-side switching and the output of the device can be adjusted accordingly.

The SI4943CDY-T1-E3 is ideal for applications where improved power delivery and accuracy are desired. The array of transistors can handle large amounts of current, making them ideal for a wide range of applications, including DC/DC converters, AC/DC converters, and automotive applications.

The SI4943CDY-T1-E3 features advanced features and technologies that make it a versatile device for the modern electronic device. It is ideal for applications where low-voltage and high-current operation are desired. It is highly efficient, reliable and cost effective. The transistors are highly reliable and offer excellent thermal performance, making them suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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