SIE800DF-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIE800DF-T1-GE3-ND

Manufacturer Part#:

SIE800DF-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 50A POLARPAK
More Detail: N-Channel 30V 50A (Tc) 5.2W (Ta), 104W (Tc) Surfac...
DataSheet: SIE800DF-T1-GE3 datasheetSIE800DF-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SIE800DF-T1-GE3 is a part of the design of a single field-effect transistor (FET). It is a type of semiconductor device that electronically controls the flow of current between two points, giving the user a wide range of options for amplifying signals, switching circuits, and more.

The SIE800DF-T1-GE3 is a vertical PNP mesa type planar power transistor. It is designed for use in the premium grade power supply and voltage regulator circuit applications. This transistor is optimized for low emitter-to-base voltage drop and high current gains with low on-state resistance. It has a high performance, very low noise and fast switching ability too.

In terms of application fields, the SIE800DF-T1-GE3 is ideal for amplifying and switching circuits. It can also be used for DC/DC converters, LED lighting, power transistors, power oscillators, power amplifiers, switching regulators, battery-charging systems and voltage regulators. These devices can handle a wide range of power input, from 18W to 42W, making them very useful for various consumer applications.

The working principle of the SIE800DF-T1-GE3 is fairly simple to understand. Their “transistor” action is initiated when a small current is applied to its base. This current then controls the larger current that can be passed between the collector and emitter. When this current is applied, it alters the semiconductor material passing between the emitter and collector. This creates an open or closed switch based on the current level applied.

These transistors are also known as voltage-controlled switches since the voltage applied to the base determines the on-off status of the current passing through the collector and emitter. This is used to control the current passing through the device, allowing it to accurately and efficiently control the voltage applied to its load.

The SIE800DF-T1-GE3 is known for its excellent functionality, making it an ideal choice for a variety of different applications. It is well-suited for high performance, low noise, and fast switching applications. Its high voltage and current ratings make it attractive for the consumer market. This makes it the go-to device for power supplies, voltage regulators, DC/DC converters, LED lighting, power transistors, power oscillators, power amplifiers, switching regulators, and battery-charging systems.

The specific data is subject to PDF, and the above content is for reference

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