SIE844DF-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIE844DF-T1-E3 is a type of single-gate field effect transistor (FET) manufactured by ST Microelectronics. It is a low power surface mounted device, specifically designed for applications where space savings are of the utmost priority.

The FET offers high current drive capability with ultra-low gate drive power consumption, making it ideal for industrial, automotive, battery-powered, and consumer applications. Its small size also makes it suitable for portable and hand-held devices that require high efficiency and reliability.

The SIE844DF-T1-E3 is a single off-state FET, which means that when the FET is turned off current can not flow through it. This type of FET is typically used in low-power applications where long-term reliability and stability are important. It is also commonly used in analog applications where it can be used to control current flow for precise results.

The SIE844DF-T1-E3 transistor can be used in a variety of applications including DC-DC converters and power supply controllers, motor control systems, LED lighting, and portable electronics. Additionally, it can be used to improve the efficiency of power supplies, ensure a constant output voltage, provide inrush current control, and more.

One other major advantage of the SIE844DF-T1-E3 is its low AC and DC switching on-times, making it ideal for use in high-speed digital designs. It also has low gate capacitance, input impedance, and gate drive voltage making it suitable for applications such as hand-held devices.

The SIE844DF-T1-E3 operates using a depletion-mode work principle. This means that current can flow in either direction and the voltage between the drain and source will remain equal. It is designed to be used in systems without an overall voltage bias, and has an operating temperature range of -40°C to 125°C.

SIE844DF-T1-E3 transistors offer excellent reliability and performance for a wide variety of applications. Its ultra-low power consumption and superior performance make it ideal for unique and demanding applications where space must be saved. This single-gate FET is an excellent choice for high performance, low power applications.

The specific data is subject to PDF, and the above content is for reference