SIE848DF-T1-GE3

The SIE848DF-T1-GE3 is a single MOSFET (Metal Oxide Field Effect Transistor) device which has a variety of applications. It is intended for use in applications which require the switch-level and low on-state resistance of a MOSFET.

A MOSFET is a type of transistor which consists of a metal oxide semiconductor (MOS) with a gate electrode. The gate electrode is insulated from the substrate of the device, and the electric field created by it controls the electrical current allowed to flow through the device. This makes MOSFETs ideal for use as electronic switches, as their gate can be used to switch on and off the flow of current, and their on-state resistance can be adjusted to control how much current can flow when the MOSFET is on.

The SIE848DF-T1-GE3 is a single MOSFET device which has a low on-state resistance, making it a good choice for switch-level applications. It has an on-state resistance of 1 ohm, making it an effective device for applications which require a low on-state resistance, such as power supplies, motor control, and other switching applications.

In addition, the SIE848DF-T1-GE3 also has a high drain-source breakdown voltage of 600 volts, making it ideal for use in high voltage applications. It also has a maximum drain current of 1.2 amps and a maximum operating temperature of 150 degrees Celsius.

The SIE848DF-T1-GE3 is an efficient device which can be used in a variety of applications, such as switching power supplies, motor controllers, lighting, and other high voltage applications. Its low on-state resistance and high drain-source breakdown voltage make it well suited for applications which require high efficiency and low power consumption.

The SIE848DF-T1-GE3 is a single MOSFET device which has a wide range of applications, thanks to its low on-state resistance and high drain-source breakdown voltage. It is an ideal choice for switch-level and high voltage applications.