SIE862DF-T1-GE3

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The SIE862DF-T1-GE3 is a Low-Rds on(Max) enhancement-mode type MOSFET with two operating modes, depletion and enhancement mode. It has a maximum drain-source (on) resistance of 60 milliohms and is capable of handling 500mA continuous current. Its maximum voltage rating is 30V and its operating temperature range is -55°C to +150°C. SIE862DF-T1-GE3 are suitable for use in high speed low power switching applications, low power audio and video amplifiers, and low noise level switching power supplies.

MOSFETs differ from other types of transistors in that they do not require a base current to function. Instead, they rely on a voltage-controlled gate to control the drain-source current. Because the gate voltage is independent of the drain-source current, it can be adjusted to precisely control the current. This allows for lower operating power and improved power efficiency, making MOSFETs ideal for use in low-power applications.

SIE862DF-T1-GE3 MOSFETs are designed for use in high-speed low-power switching applications. The low drain-source on-resistance makes them ideal for use in audio and video amplifiers, as they can switch quickly while minimizing power loss. In addition, they can be used in low-noise level switching power supplies, as they provide minimal power loss and can be used in noise-sensitive areas.

The SIE862DF-T1-GE3 MOSFETs provide low power loss and high efficiency, making them ideal for use in power supply and switching applications. The low on-resistance minimizes power dissipation, increasing system efficiency and reducing energy costs. Additionally, the voltage-controlled gate allows for precise current control, making the SIE862DF-T1-GE3 MOSFETs ideal for use in high speed low power switching applications.

The SIE862DF-T1-GE3 MOSFETs are designed to operate in both depletion and enhancement mode. In depletion mode, the MOSFETs are “on” and the drain-source current is maximum. In enhancement mode, the MOSFETs are “off” and the drain-source current is zero. Because of this, the SIE862DF-T1-GE3 MOSFETs can be used as switches, allowing for low power, high speed switching applications.

The SIE862DF-T1-GE3 MOSFET is a low-Rds on(Max) enhancement-mode type MOSFET with a maximum drain-source (on) resistance of 60 milliohms and capable of handling 500mA continuous current. It is suitable for use in high speed low power switching applications, low power audio and video amplifiers, and low noise level switching power supplies due to its low on-resistance, voltage-controlled gate and precision current control.

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