SIE836DF-T1-E3 Allicdata Electronics
Allicdata Part #:

SIE836DF-T1-E3-ND

Manufacturer Part#:

SIE836DF-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 18.3A POLARPAK
More Detail: N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Sur...
DataSheet: SIE836DF-T1-E3 datasheetSIE836DF-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: 10-PolarPAK® (SH)
Supplier Device Package: 10-PolarPAK® (SH)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIE836DF-T1-E3 is a single enhancement-mode MOSFET with a P-channel type and a Vds rating of up to 100 V. It is designed for off-state gate voltage up to 12 V and can be used in a wide range of P-channel automotive and industrial applications. Additionally, it has a maximum on-state drain current of 12 A and low on-state resistance.

The primary application field for SIE836DF-T1-E3 is for load switching and level shifting devices, where it can be used in automotive applications, such as engine or electric powertrain control as well as high-side switches in off-board devices. It is also suitable for low side switching in 12V power and wireless control applications. Additionally this P-channel MOSFET can be used as a current-limiting device or as a controlled current source in portable devices.

The working principle of the SIE836DF-T1-E3 is very simple. It is a three-terminal device in which the Gate terminal is used to control the Drain current. When the Gate voltage is above the threshold voltage, the Drain current is allowed to flow from the Source to the Drain, allowing the device to be used as an amplifier between input and output signals. The threshold voltage for the SIE836DF-T1-E3 is –1V and the on-state resistance for saturation is between 0.3 and 0.4 ohm.

SIE836DF-T1-E system offers several advantages over other MOSFETs, such as its wide range of operating voltages and the ability to limit the on-state current, eliminating the need for current limiting resistors. Additionally, the device has low EMI/RFI emission levels, making it suitable for applications in environments with high noise levels.

In summary, SIE836DF-T1-E3 is a single enhancement-mode MOSFET with a P-channel type and a Vds rating of up to 100 V. It is designed for off-state gate voltage up to 12 V and can be used in a wide range of P-channel automotive and industrial applications. This MOSFET offers several advantages, such as its wide range of operating voltages and the ability to limit the on-state current, eliminating the need for current limiting resistors. Additionally, it has a maximum on-state drain current of 12 A and low on-state resistance.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIE8" Included word is 40
Part Number Manufacturer Price Quantity Description
SIE816DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 60A POLAR...
SIE820DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 50A POLAR...
SIE830DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 50A POLAR...
SIE832DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 40V 50A 10-PO...
SIE848DF-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 60A POLAR...
SIE800DF-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 50A 10-PO...
SIE818DF-T1-GE3 Vishay Silic... 1.53 $ 1000 MOSFET N-CH 75V 60A POLAR...
SIE808DF-T1-GE3 Vishay Silic... 1.53 $ 1000 MOSFET N-CH 20V 60A POLAR...
SIE878DF-T1-GE3 Vishay Silic... 0.56 $ 1000 MOSFET N-CH 25V 45A POLAR...
SIE802DF-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 60A 10-PO...
SIE864DF-T1-GE3 Vishay Silic... 0.63 $ 1000 MOSFET N-CH 30V 45A POLAR...
SIE854DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 60A POLA...
SIE874DF-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 60A POLAR...
SIE836DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 200V 18.3A PO...
SIE808DF-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 20V 60A 10-PO...
SIE860DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 60A POLAR...
SIE822DF-T1-GE3 Vishay Silic... 1.02 $ 1000 MOSFET N-CH 20V 50A POLAR...
SIE820DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 50A 10-PO...
SIE868DF-T1-GE3 Vishay Silic... 0.88 $ 1000 MOSFET N-CH 40V 60A POLAR...
SIE810DF-T1-E3 Vishay Silic... 1.33 $ 1000 MOSFET N-CH 20V 60A 10-PO...
SIE844DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 44.5A POL...
SIE876DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 60A POLAR...
SIE860DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 60A POLAR...
SIE810DF-T1-GE3 Vishay Silic... 1.33 $ 1000 MOSFET N-CH 20V 60A POLAR...
SIE862DF-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 50A POLAR...
SIE812DF-T1-E3 Vishay Silic... 1.33 $ 1000 MOSFET N-CH 40V 60A 10-PO...
SIE832DF-T1-GE3 Vishay Silic... 1.2 $ 1000 MOSFET N-CH 40V 50A 10-PO...
SIE848DF-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 60A POLAR...
SIE854DF-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 100V 60A POLA...
SIE806DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 60A 10-PO...
SIE836DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 200V 18.3A PO...
SIE812DF-T1-GE3 Vishay Silic... 1.33 $ 1000 MOSFET N-CH 40V 60A POLAR...
SIE816DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 60V 60A POLAR...
SIE806DF-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 60A POLAR...
SIE818DF-T1-E3 Vishay Silic... 1.52 $ 1000 MOSFET N-CH 75V 60A 10-PO...
SIE830DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 50A 10-PO...
SIE844DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 30V 44.5A POL...
SIE822DF-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 20V 50A 10-PO...
SIE802DF-T1-GE3 Vishay Silic... 1.42 $ 1000 MOSFET N-CH 30V 60A POLAR...
SIE882DF-T1-GE3 Vishay Silic... 0.88 $ 1000 MOSFET N-CH 25V 60A POLAR...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics