SIE836DF-T1-E3

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SIE836DF-T1-E3 is a single enhancement-mode MOSFET with a P-channel type and a Vds rating of up to 100 V. It is designed for off-state gate voltage up to 12 V and can be used in a wide range of P-channel automotive and industrial applications. Additionally, it has a maximum on-state drain current of 12 A and low on-state resistance.

The primary application field for SIE836DF-T1-E3 is for load switching and level shifting devices, where it can be used in automotive applications, such as engine or electric powertrain control as well as high-side switches in off-board devices. It is also suitable for low side switching in 12V power and wireless control applications. Additionally this P-channel MOSFET can be used as a current-limiting device or as a controlled current source in portable devices.

The working principle of the SIE836DF-T1-E3 is very simple. It is a three-terminal device in which the Gate terminal is used to control the Drain current. When the Gate voltage is above the threshold voltage, the Drain current is allowed to flow from the Source to the Drain, allowing the device to be used as an amplifier between input and output signals. The threshold voltage for the SIE836DF-T1-E3 is –1V and the on-state resistance for saturation is between 0.3 and 0.4 ohm.

SIE836DF-T1-E system offers several advantages over other MOSFETs, such as its wide range of operating voltages and the ability to limit the on-state current, eliminating the need for current limiting resistors. Additionally, the device has low EMI/RFI emission levels, making it suitable for applications in environments with high noise levels.

In summary, SIE836DF-T1-E3 is a single enhancement-mode MOSFET with a P-channel type and a Vds rating of up to 100 V. It is designed for off-state gate voltage up to 12 V and can be used in a wide range of P-channel automotive and industrial applications. This MOSFET offers several advantages, such as its wide range of operating voltages and the ability to limit the on-state current, eliminating the need for current limiting resistors. Additionally, it has a maximum on-state drain current of 12 A and low on-state resistance.

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