SIE810DF-T1-E3 Allicdata Electronics
Allicdata Part #:

SIE810DF-T1-E3TR-ND

Manufacturer Part#:

SIE810DF-T1-E3

Price: $ 1.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 60A 10-POLARPAK
More Detail: N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surfac...
DataSheet: SIE810DF-T1-E3 datasheetSIE810DF-T1-E3 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.19484
Stock 1000Can Ship Immediately
$ 1.33
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 10-PolarPAK® (L)
Supplier Device Package: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIE810DF-T1-E3 is a silicon enhancement-mode N-channel MOSFET from Seiko Instruments, capable of handling up to 3.2A at a low 0.47Ω RDS(ON). This MOSFET is suitable for many applications and is a great choice for use as an electronic switch or power amplifier.

In comparison to other types of MOSFET transistors, the SIE810DF-T1-E3 provides better performance, reliability and much lower on-state resistance (RDSON). This makes it the ideal choice for applications that require a low-resistance, high-performance MOSFET such as in switching circuits.

The main advantage of the SIE810DF-T1-E3, compared to other MOSFET transistor types, is that it is capable of higher turn-on and turn-off times, which helps to reduce power losses caused by switching transistors. This makes it ideal for use in switching power supplies, to switch high current loads and for operating other types of electrical devices.

The working principle of the SIE810DF-T1-E3 is based on the principle of a depletion-mode MOSFET wherein the gate terminal of the transistor is tied to a positive voltage. When a negative voltage is applied to the gate terminal, it switches the transistor off, enabling current to pass between the source and drain terminals of the transistor. When the voltage applied to the gate terminal is removed, the transistor is no longer switched off and its resistance increases, thus preventing current from passing between the source and drain terminals.

The SIE810DF-T1-E3 is best suited for use in applications such as automotive and consumer electronics, where high efficiency and low power loss is required. This MOSFET transistor can be used in power circuits, high power amplifiers and switching applications where a low threshold voltage and a high current capacity is desired. It is also suitable for use as a motor speed control, since it has a low RDS ON value which helps to reduce power losses.

The SIE810DF-T1-E3 has a variety of applications and is a very versatile device which makes it a great choice for many different applications. Its low RDS ON value and high current capability make it an ideal choice for use in many circuits and as an electronic switch or power amplifier. It is also capable of high turn-on and turn-off times which makes it suitable for use as a motor speed control. In addition, its enhanced performance makes it a reliable and efficient choice for automotive and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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