SIE806DF-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIE806DF-T1-GE3-ND

Manufacturer Part#:

SIE806DF-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 60A POLARPAK
More Detail: N-Channel 30V 60A (Tc) 5.2W (Ta), 125W (Tc) Surfac...
DataSheet: SIE806DF-T1-GE3 datasheetSIE806DF-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 10-PolarPAK® (L)
Supplier Device Package: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction

The SIE806DF-T1-GE3 is an N-channel enhancement mode field-effect transistor (FET) with a wide range of applications.

Applications

The SIE806DF-T1-GE3 is a suitable device for many applications, including load and line switch, signal switches, signal conditioning and signal routing applications. Its wide range of possible uses makes it a suitable device for almost any type of application in industrial and some consumer applications.

Operating Principles

The SIE806DF-T1-GE3 operates on the principle of Field-Effect Transistors (FETs), and is composed of a semi-conductive material. The semi-conductive material acts as a gate, when a voltage is applied to the pin, it creates a field that attracts the electrons in the semi-conductive material. This causes an amplification in the current which passes through the device and can be distorted, controlled and modulated to perform various tasks. The SIE806DF-T1-GE3 FET also has two sources of current flow, one from the pin and one to the pin, and a DRAIN, where the diverted current flows. The drain can be configured as an output that controls voltage and current.

Advantages and Disadvantages

The SIE806DF-T1-GE3 is a low-cost, low-power and high-efficiency semiconductor device, which makes it a suitable choice for many applications. It has the benefits of a low-temperature sensitivity, low-voltage operation, and low input capacitance and can handle high switching frequencies with great accuracy and a very short transit time.

The disadvantages of the SIE806DF-T1-GE3 is its low power handling and low input capacitance which limit its applications.

Conclusion

The SIE806DF-T1-GE3 is the perfect choice for a wide range of applications, such as load and line switch, signal switches, signal conditioning and signal routing applications. It is a cost-effective solution to many problems, and its low-temperature sensitivity, low-voltage operation, and low input capacitance make it an ideal component for applications that require high switching frequencies and accurate results.

The specific data is subject to PDF, and the above content is for reference

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