SIE808DF-T1-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	10-PolarPAK® (L)
Supplier Device Package:	10-PolarPAK® (L)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.2W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8800pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	155nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	1.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SIE808DF-T1-E3 is a single P-Channel Field Effect Transistor (FET) designed for military, aerospace, high reliability and commercial applications. It is a high performance device, providing a variety of features to enhance system performance in high voltage, high temperature and ambient condition environments.The SIE808DF-T1-E3 has an operating voltage range from -100V to -500V, with a maximum current rating of 1A. It is available in several packages such as TO-92, die and other lead-frame based packages such as SOT-223 and SOT-563. It is suitable for use in high voltage, high power, and temperature sensitive applications such as power management and motor control.The SIE808DF-T1-E3 is designed to work with either digital or analog circuits. It can be used in a variety of applications, including buzzing and flashing alarm circuits, voltage regulators, power converters, power MOSFET gate drive, data acquisition systems, switching AC and DC motor control, multiplexer logic interfaces, audio amplifiers and switches, digital logic circuit and power supplies.The SIE808DF-T1-E3 offers several benefits that make it suitable for various applications. Its high input impedance permits it to work with other components in a series, enabling the construction of high efficiency supplies. The low output impedance and high slew rate makes it suitable for use in switching application. Additionally, the strong output current capability and low static power dissipation make it suitable for a wide range of applications.The working principle of the SIE808DF-T1-E3 is quite simple. It consists of a pair of metal-oxide-silicon gate electrodes that control a conduction channel in the semiconductor substrate between the source and the drain. When an electric field is applied between the gate and the source, it modulates the conduction channel and controls the current passing between the source and the drain.The SIE808DF-T1-E3 is a must-have transistor for a variety of power management and motor control applications. Due to its wide range of features and flexibility, it is one of the most widely used single FET devices. Its advantages include low on-state resistance and low gate threshold voltage. It is a versatile device that can be used in a variety of system and applications.

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