| Allicdata Part #: | SIE816DF-T1-GE3-ND |
| Manufacturer Part#: |
SIE816DF-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 60A POLARPAK |
| More Detail: | N-Channel 60V 60A (Tc) 5.2W (Ta), 125W (Tc) Surfac... |
| DataSheet: |  SIE816DF-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4.4V @ 250µA |
| Package / Case: | 10-PolarPAK® (L) |
| Supplier Device Package: | 10-PolarPAK® (L) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5.2W (Ta), 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 7.4 mOhm @ 19.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SIE816DF-T1-GE3 Transistor is a type of Field Effect Transistor (FET) that is used in both analog and digital circuits. It is a three terminal device which has a gate, source and drain. It is mainly used as a switch or amplifier, and is often used in power supplies and amplifier circuits. The SIE816DF-T1-GE3 is a Single-Gate N-Channel MOSFET, meaning it has one gate and a single-channel conductive in the semiconductor material between source and drain.The SIE816DF-T1-GE3 is mostly used for Signal switching and amplifier applications. It can also be used for high speed switching applications, where it can be used to switch between its source and drain nodes. The device has a high switching frequency, making it suitable for RF, microwave, and high-speed digital applications. It is also used in application circuits such as synchronous buck converters and low frequency switching regulators. The SIE816DF-T1-GE3 is constructed with an N-type semiconductor material and is normally in the OFF state, meaning there is no current flow between the source and the drain of the device. When a positive voltage is applied to the gate, the device will turn ON, and current flows between the source and drain. The SIE816DF-T1-GE3 has a maximum drain-source breakdown voltage of 55 volts and a maximum drain current of 16 amps. It also features a gate-source voltage of ±20V, a continuous on-state current ratio of 4.2, and an on-resistance of less than 2 Ohms. Its maximum junction temperature is 175°C, making it suitable for use in high temperature applications. The SIE816DF-T1-GE3 is a highly efficient device and can be used in many applications, including low loss and low noise amplifier circuits, as well as high speed switching applications. It also has many advantages, such as low gate charge, low turn-on and turn-off times, and low on-resistance. All of these traits make the SIE816DF-T1-GE3 a great choice for many applications, including RF, microwave, and power supplies. In conclusion, the SIE816DF-T1-GE3 is an N-type Single-Gate MOSFET that can be used for both analog and digital circuits. It can be used in a variety of applications, including signal switching and amplifiers, low noise and low loss amplifiers, and high frequency switching applications. It has a high drain breakdown voltage and is suitable for use in high temperature applications. It is a highly efficient device, and its low gate charge, low turn-on and turn-off times, and low on-resistance make it an ideal choice for many power supplies and amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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