SIE820DF-T1-GE3

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The SIE820DF-T1-GE3 is a single N-channel enhancement mode MOSFET. The device has an exceptionally high-purity silicon substrate with very low resistance, giving superior switching performance, excellent low on-state resistance and improved power dissipation for automotive applications, making it a suitable solution for DC/DC conversion, switching power supply and electric powertrain applications.

The device operates using typically positive gate control. When a positive voltage is applied to the gate, it raises the electric field around the metal oxide gate and creates holes in the oxide layer. These holes allow current to flow through the channel to the drain, effectively allowing the MOSFET to act as a switch to control current. The higher the gate voltage, the lower the on-state resistance. This feature makes the SIE820DF-T1-GE3 suitable for fast switching applications, such as DC/DC converters, Switching Power Supplies and Motor Drivers.

The device can handle high levels of power, up to 50A of continuous drain current and 135A of pulsed drain current. This makes it suitable for high-power applications, such as automotive and industrial motor control, off-board inverters, server power supplies, solar inverters and phase control circuits.

The SIE820DF-T1-GE3 is also suitable for applications that require fast switching speeds and low power losses, such as those found in AC/DC and DC/DC converters. The device has a typical turn-on time of 7ns and a typical turn-off time of 4ns, which make it suitable for high-speed switching applications. The low on-state resistance of 0.88 Ohms also makes it very suitable for power efficiency in these applications. In addition, the device is also suitable for applications that require EMI/RFI noise suppression, such as computer servers and power supplies.

SIE820DF-T1-GE3 is a high-performance device with a wide variety of application fields. It is suitable for very high-current applications, such as industrial and automotive motor control, off-board inverters, and various other AC/DC and DC/DC conversion applications. It has fast switching speeds and low power losses, making it suitable for power efficiency and EMI/RFI noise suppression. Furthermore, its exceptionally high-purity silicon substrate with very low resistance makes it suitable for superior switching performance and improved power dissipation in automotive applications.

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