SIE830DF-T1-E3

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The SIE830DF-T1-E3 is an advanced single N-channel Enhancement Mode Field-Effect Transistor (FET) from Infineon Technologies. It is designed for high current and low on-resistance applications that require high-voltage switching and power switching.

The SIE830DF-T1-E3 offers low on-resistance levels up to 13.3 V, 2.3 Ω at the -2V gate drive voltage, and up to 100 A drain current. Its low threshold voltage ensures the device can be driven with a low gate drive voltage. This feature makes the SIE830DF-T1-E3 a great choice for applications requiring a low voltage gate drive.

The SIE830DF-T1-E3 is ideal for use in high current and low on-resistance applications such as switching regulator and DC-to-DC converters, lighting applications, automotive power supplies and motor control applications. The device also has a low gate-threshold voltage and can be driven with a low gate drive voltage. This makes it well-suited for low voltage designs. The SIE830DF-T1-E3 can also handle high current spillover of up to 200 A.

The working principle of the SIE830DF-T1-E3 involves two potential gates. The gate voltage is applied to the control gate which actuates the device, transferring control signals from the supply terminal to the drain. A negative or positive charge is required to create the electric field that creates the on-state or off-state. When the voltage applied is lower than the gate threshold voltage, the device is in the “off” state. When the voltage applied is higher than the gate threshold voltage, the device is in the “on” state.

The SIE830DF-T1-E3 provides both high current and low on-resistance in a single package. It\'s high voltage switching capabilities, low gate drive voltage and high current drain current make it a great choice for high current and low on-resistance applications. The device is small in size and has low power consumption. The SIE830DF-T1-E3 is a great choice for applications requiring both high current and low on-resistance.

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